GaN-transistors have a relatively high input resistance, which permits to design the broad-band chains of concordance, providing high efficiency and high output power. For efficient using the GaN-transistors as a part of the high power amplifier in practice a precise model of the equivalent circuits of the transistor is required. For complex studying the amplifier the estimation of the total electric circuit, containing the circuits of shift, power, matching at the transistor input and output, high power added efficiency (PAE) and greater output power are necessary. Such estimation is efficiently executed by the algorithms of the frequency analysis of non-linear circuits by the harmonic balance method. In the work the investigation of the high-frequency high-power amplifiers with 100 Wt level, based on using the non-linear models of transistors Modelithics GaN of Oorvo Company in the Keysight Technologies Advanced Design System (ADS) computer environment, has been carried out. The complete electric circuit of the high power amplifiers on the concentrated and microstrip elements has been considered. The elements of the circuit have been calculated using the parameters optimization, the purpose function of which is the complex of the amplifier parameters, that is: the maximum output power, the maximum efficiency, the maximum band of operating frequency, the stable operation of the amplifier. As an example, the amplifier based on the 100Wt GaN transistor of Oorvo model TGF2929 Company has been presented. The configuration of the matching circuit at the output of the high power transistor, providing 100Wt power, the efficiency not less than 60% in the frequency band 40% from the central frequency 500 MHz has been determined. The electric circuit permits to form harmonics in the large signal mode at the transistor output, necessary for high efficiency realization.
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