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The results of the study on the influence of the seed copper layer surface state on the uniformity of the electrochemical copper fill of the grooves with submicron dimensions have been presented. It has been noted that the quality of the filling is connected with the absence or presence on the surface of the seed layer of the copper oxide film, characterized by the hydrophobic properties. It has been shown that for a uniform filling of the grooves with copper in the transition windows in the interlevel dielectric layers while creating the copper multilevel metallization of silicon ICs the time of the plates interoperational storage after deposition of the copper seed layer to fill the grooves with copper should not exceed the maximum allowable time ~ 6 hours.

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