Persons

The efficiency of admixtures of rare-earth elements in silicon, an exhibition of the structures optical properties depends on the spectrum of optically and electrically active centers, containing rare-earth elements, their total concentration as well as on the interaction with the non-controllable admixtures and with thermal defects in the bulk of the material. In present work the investigations have been performed by the methods of the neutron-activation analysis, IR-spectroscopy, isothermal relaxation of the content. For studying the deep levels, located in the lower half of the prohibited zone n-Si the optical re-charging, has been applied. The influence of thermal treatments on the electrophysical properties of n-type silicon, doped by samarium, gadolinium and ytterbium during growing, has been investigated. It has been shown that the presence of these elements in silicon during the heat treatment in the temperature range 900-1200 ºC for 2 hours in the air and in the pumped out ampoules with subsequent quenching or slow cooling suppresses the high-temperature defects.

• Counter: 1600 | Comments : 0