Persons

The results of the studies on the thin films of ZnO:Ga, obtained by the magnetron sputtering of the corresponding target in argon and argon with 5% hydrogen without heating the substrate, have been presented. It has been shown that the resistivity and stability over time of the ZnO:Ga films depend on their thickness, the exposure to solar radiation and the external environment. It has been determined that the doping of the ZnO:Ga films by hydrogen can substantially reduce their resistivity and an increase the stability of the films in time can be achieved by the coating, that protects against the effects of the external gas environment.

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The results of the study on the parameters of permalloy films, produced by the electrochemical deposition in the local areas, limited by the photoresist mask on metallic surface of silicon wafer, have been presented. The experimental dependencies of magnetic parameters of the deposited permalloy on the electrolyte excerpt time have been obtained. The possibility of application of the deposited films as the magnetic field screens of the digital isolators with galvanic separation on the basis of magnetic nanostructures has been shown.

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It has been found that the relative current sensitivity of the current dual-collector lateral bipolar magnetotransistor is determined by the layout of electrodes, the dopant distribution in well (also the base of BMT), the circuit of switching-on with the general potential of the basis and substrate, an operation mode near to saturation, the value of collectors load resistance.

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The ZnO thin film investigation results have been presented for MEMS integrated device use. It has been shown that the specific resistance and stability of ZnO:Ga thin films depend significantly on their thickness, solar radiation effect, and the external environment. The instability of the ZnO thin films is caused by the processes of generation and healing the oxygen vacancies, creating the donor levels in the ZnO band gap.

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