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The results of the analysis of manufacturing the microaccelerometer capacitive sensor based on the high aspect inter-digital comb structures, fabricated on the bulk process technology using the deep silicon anisotropic etching (Bosch-process) and glass anodic bonding, have been presented. The analysis of manufacturing the sensor element after weighing its sensitive high aspect mass during the silicon etching process has been performed using the method of measuring the voltage applied to the inter-digital comb structures, in which a sharp change of the capacitors (voltage pull-in) had taken place. The calculation and experimental results of voltage pull-in changes depending on the lateral dimensions of spring beam and comb structures as a result of over etching at the stage of weighing the sensitive mass have been presented. It has been shown that by the value of this voltage the express diagnostics of the sensitive element can be carried out.

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