Persons

The surface of silicon on sapphire (SOS) epitaxial layers have been investigated by the atomic-force and UV scattering methods. The X-Ray-structural analysis of SOS has been performed. The transient area silicon-sapphire has been studied by photo-EMF method. The problem of accumulating the silicon synthesis secondary products has been considered and experimentally confirmed. It has been found that the addition of the chlorides containing reagents into the epitaxy process permits to exclude the influence of these products on the growing layer and, also, to modify the surface microrelief. The studies on the SOS surface and layers structure have enabled to determine that the growth of films is realized according to the Stranski-Krastanov mechanism. It has been shown that the combined method contained in the preliminary growing of the SOS layer of 30-60 nm thickness from pure SiH and further layer growing with the ratio of gas components consumptions 2SiH:1SiC1 is a more preferable method of manufacturing SOS with the layer thickness from 300 nm and more.

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The tricky optimization procedure of silicon-on-sapphire heteroepitaxy is one of the restricting factors to widespread utilization of the silicon-on-sapphire (SOS) wafers. In order to eliminate the given technological barrier in the work the process of gas-phase forming the silicon initial layer on the sapphire R-plane has been investigated. The parameters of the manufactured layers have been analyzed using the production methods of the quality control as well as by XRD, SEM and Raman spectroscopy. The resistivity profiles of the SOS layers have been obtained by the specific resistance spreading method (SPR). It has been shown that the execution of the initial stage of growing at 910–930 °C results in reduction of the silicon layer autodoping by aluminum from the substrate. The heat treatment of the initial layer, formed at 945–965 °C enables to obtain the SOS structures of high structural quality in a wide temperature range of the main layer deposition 960–1005 °C. A comparison of the SOS structures, obtained at the optimal parameters of the investigated technique and in the standard process has demonstrated a reduction of the full width half maximum of rocking curve to ~0.24, the reduction of mechanical stresses of compression up to 0.8–1.96 GPa, the homogeneity of the specific resistance profile up to 180–350 nm depth. Due to the application of the developed technological techniques the homogeneity of the SOS control parameters within the process significantly has increased, which has enabled to improve the productivity of the manufacturing process.

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