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The electrical conductivity of TiO layers doped at high concentration vanadium has been carried out as a function of temperature 77-300 K. The layers have been grown by the RF-magnetron sputtering on matched LaAlO substrates. It has been shown that in case of the V-doping the 3D variable range hopping (VRH) conductivity by the Mott law is observed. The hopping conductivity parameters: average hopping energy, hopping distance and density of states at the Fermi level have been calculated.

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