Persons

It has been analytically demonstrated that in the symmetric bipolar transistor structures with small defects with the preset full emitter current the difference between the currents, that flow through the symmetrical parts of the structure, is proportional to the value of the defect, and as a result of the structure self-heating, practically is linearly increasing with the collector voltage increase. The results of the theoretical analysis have been confirmed by computer modeling based on the program package «Workbanclm, supplemented by the block of computation of the structure parts temperatures.

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