Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, Russia, 199334, Moscow, Leninsky ave., 32A
Cand. Sci. (Chem.), Scientific Researcher of the Development and Research of Micro- and Nanosystems Department, Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences (Russia, 199334, Moscow, Leninsky ave., 32A)
National University of Science and Technology “MISiS”, Russia, 119049, Moscow, Leninsky ave., 4
Cand. Sci. (Phys.-Math.), Head of the Physics of Oxide Ferroelectrics Laboratory, National Research Technological University “MISiS” (Russia, 119049, Moscow, Leninsky ave., 4)
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1
Master’s degree student of the Institute of Advanced Materials and Technologies, National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
National Polytechnic University of Armenia, Armenia, 0009, Yerevan, Teryan st., 105; “Synopsys Armenia” CJSC, Armenia, 0026, Yerevan, Arshakunyats ave., 41
PhD student of the Microelectronic Circuits and Systems Department, National Polytechnic University of Armenia (Armenia, 0009, Yerevan, Teryan st., 105), Design Engineer of Analog and Mixed Signal Circuit, Eng. II, “Synopsys Armenia” CJSC (Armenia, 0026, Yerevan, Arshakunyats ave., 41)
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
Engineer of the Institute of Integrated Electronics, National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)