Persons

Anna P. Sirotina

Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, Russia, 199334, Moscow, Leninsky ave., 32A
Cand. Sci. (Chem.), Scientific Researcher of the Development and Research of Micro- and Nanosystems Department, Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences (Russia, 199334, Moscow, Leninsky ave., 32A)

Dmitry A. Kiselev

National University of Science and Technology “MISiS”, Russia, 119049, Moscow, Leninsky ave., 4
Cand. Sci. (Phys.-Math.), Head of the Physics of Oxide Ferroelectrics Laboratory, National Research Technological University “MISiS” (Russia, 119049, Moscow, Leninsky ave., 4)

Zung Vu Van

National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1
Master’s degree student of the Institute of Advanced Materials and Technologies, National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Sergo S. Harutyunyan

National Polytechnic University of Armenia, Armenia, 0009, Yerevan, Teryan st., 105; “Synopsys Armenia” CJSC, Armenia, 0026, Yerevan, Arshakunyats ave., 41
PhD student of the Microelectronic Circuits and Systems Department, National Polytechnic University of Armenia (Armenia, 0009, Yerevan, Teryan st., 105), Design Engineer of Analog and Mixed Signal Circuit, Eng. II, “Synopsys Armenia” CJSC (Armenia, 0026, Yerevan, Arshakunyats ave., 41)

Vera P. Smirnova

National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
Engineer of the Institute of Integrated Electronics, National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
Next

124498, Moscow, Zelenograd, Bld. 1, Shokin Square, MIET, editorial office of the Journal "Proceedings of Universities. Electronics", room 7231

+7 (499) 734-62-05
magazine@miee.ru