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The thermal resistance of the semiconductor device determines its thermal performance limit, guaranteeing its working capacity: the higher the value of the thermal resistance of the semiconductor device, the more is its overheating. Nowadays, the method to find the junction-to-case thermal resistance from its thermal function, using the structural functions: differential and integral (cumulative) thermal capacities, is commonly used. In the work a new thermal characteristic («function of a thermal flow») - the function of the heat flow, permitting to determine the moment when the thermal front reaches the heat sink, has been proposed. In this case the point of inflexion of the heat flow function corresponds to the junction-to-case thermal resistance, found from the analogous method. The determination of the cumulative thermal capacitance from the equation of the thermal balance has been used. Besides, the structural functions have been determined analytically without a numerical deconvolution procedure. The comparison of the offered method with other similar methods has shown that: giving the same results this new technique is simpler in processing of the results, it reduces the time of the measurement and does not impose the strict requirements to the heat sink. The given method can be used for comparison of designs and in the thermal resistance-based analysis of defects of produced semiconductor devices.

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