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Active research of the GeSbTe material (GST225) is connected with the possibility of creating multi-level non-volatile elements for high-speed integrated optical functional circuits. The principle of multi-level recording in these devices is based on the formation of regions in GeSbTe thin films with partial crystallization and significantly different optical properties. To predict the parameters of the effect that initiates phase transformations and reliably ensure a reversible transition between a set of logical states, it is necessary to have reliable information about the optical characteristics of GeSbTe thin films in states with different degrees of crystallization and the conditions for their production. Thereby, the purpose of this research was to determine the influence of phase state GeSbTe films on the extinction coefficient ( k ) and refractive index ( n ) and study changes in the values of optical band gap depending on the annealing temperature have been considered. The obtained samples of GeSbTe thin films were examined using atomic force microscopy, X-ray phase analysis, and energy dispersion X-ray phase analysis, and energy-dispersive microanalysis to determine the film thickness, morphology, phase state, and composition of the films. The ellipsometry method was used to obtain the spectra of ellipsometric angles ψ and Δ (the amplitude and phase components of light wave) and the parameters n and k were determined. The influence of layer and mathematical models on the calculation dispersion of optical parameters of GeSbTe films, have been considered. It was found a significant increase in the values of n and k on the wavelength of 1550 nm when annealing above 200 °C has been found. It has been shown that in the amorphous state, GeSbTe thin films have an optical band gap equal to 0,71 eV, and in the crystalline = 0,47 eV. It was determined that the dependences of the refractive index, extinction coefficient, and optical band gap on the degree of crystallization of GeSbTe thin films are close to linear.

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The peculiarities in kinetics of the local probe oxidation of ultra thin V, Nb, Ta, Ti, TiN, TiN, W metal films have been investigated. It has been found that the process kinetics is determined by such properties of the material being oxidized, as the specific resistance, presence of the surface natural oxide film and its thickness, the correlation of specific density of metal and oxide, the oxidation process electric-chemical constant. As a material, providing the maximum productivity in formation of the local dielectric regions, having nanometer dimensions, vanadium has been chosen, that is characterized by maximum rate of the anodic probe oxidation.

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The results of the studies on the scanning electrical-conductivity Transport Properties have been shown. The correlation of the required pressing force on the conductive cantilever to the surface, which provides a close contact with the test sample, with the material hardness and the thickness of the cantilever conductive coating, has been revealed. It has been shown that while investigating at higher values the potential difference on one hand, it is necessary to take into account the possible effect of the conductive coating material redistribution from the cantilever to the sample surface, on the other hand- the ability to provide the higher resolution while investigating the sample topography by conductive cantilever.

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The data on the peculiarities in formation on the surface of solid bodies of the dielectric mask, modulated by thickness, based on local anodic oxidation, have been presented. This has been achieved due to procedure of changing the voltage impulse parameters in the course of scanning according to the specified pattern of super-thin oxidized metal film. It has been shown that the process expands the capabilities of the local anodic oxidation for nanotechnologies in the functional electronics.

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