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Currently, the devices in the area of microwave and EHF ranges, using the nonlinear properties of the bulk the AB type semiconductors, which are manifested at high electric fields strengths, are being developed. The processes of formation of solutions and domains with various levels of the electric fields strengths have been rather explicitly studied. In this connection the issue of creating convenient for practical use of the models, describing the behavior of the carriers in the specified conditions and the determination of the output parameters of the chip structure for implementation in the equivalent circuits of the devices, remains not well investigated. In the work, on the basis of the phenomenological approach consideration to warming processes in the bulk of some semiconductors structures (type AB, etc.) a method of microwave and EHF conduction calculation, based on the solution of the heating and carrier drift equations in the strong electric fields, has been proposed. The analytic frequency dependences for the amplitude and phase of conductivity, illustrating the possibility of realizing the generation regime, have been obtained. A quasi-stationary I-V characteristic for the fundamental harmonic of the output signal has been analyzed. The calculated AFC- and PFC-conductivities enable to sel ect the required value of the constant field strength, providing the required regime of the device operation on the bulk semiconductors structure in the specified frequency range. The equation for the current density of hot carriers permits to analytically determine the ranges of amplitudes for the first (basic) harmonic of the output current at specific frequency fr om the strength amplitude.

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