The design considerations for passive and active vector silicon-based monolithic microwave phase shifters for Phased Array Radar application have been presented. It has been shown that the use of the active vector phase shifters provides a significant reduction of the introduced losses and an improvement of precision parameters, inaccessible for the passive transmission phase shifters. Five types of monolithic and hybrid multi-bit phase shifters of 2-12 GC range have been developed and the experimental study results have been presented.
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The methods for designing active phase shifters LSIs using SiGe-BiCMOS technologies have been developed. The results of modeling measurements of the parameters have been presented. The structural diagram of the phase shifter, which provides an increase in the dynamic range, has been proposed. The achieved characteristics of LSI are comparable with the parameters of its foreign analogues.
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