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Study on Influence of Constructive-Technological Factors on Conductivity and Breakdown Voltage of Lateral LDMOSFET Transistors by Simulation Methods

The influence of the constructive-technological factors on the parameters of lateral LDMOSFET transistors has been investigated. The results of simulation of the lateral LDMOSFET transistors have been presented.

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11.03.2026 Vol. 31, no. 1, 2026 has been published

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We are pleased to inform you that latest issue of scientific and technical journal "Proceedings of Universities. Electronics", vol. 31, no. 1, 2026, has been published on February 16, 2026.

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