Persons

The radiation effects in planar nanosized structures under static and pulse irradiation have been analyzed. The characteristics of the planar nanosized structure samples fabricated by deposition of super-thin titanium film and of the field-effect transistors based, on the carbon nanotube bundles, on the semi-isolating GaAs substrate have been investigated. The physical mechanisms in radiation change of the nanoelectronics device characteristics have been determined.

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