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The comprehensive analysis of the problem of appearance of the carbon inclusions in the silicon carbide monocrystal during growing the silicon carbide ingots by the modified-Levy method (so called ingot graphitization) has been presented. It has been shown that the ingot graphitization process can not be caused by silicon deficiency in the growth cell, on the contrary, just an excess of silicon near the growth surface retards the rate of the ingot growth process and results in the intensive corrosion of the graphite fittings.

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