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The radiation stability of the AlGaN/GaN millimeter-wave signal converters, irradiated by neutron and gamma radiation, has been investigated. As the parameters for estimation of the stability the following characteristics have been chosen: the output microwave signal range, the conversion factor and total consumed current. The dependence of the consumed current on the absorbed dose and the sample temperature under gamma irradiation has been obtained. The effect of the neutron flux upon the characteristics has been found insignificant, though the gamma irradiation has resulted in a considerable increase of consumed current due to formation of the nitrogen donor vacancies, annealing of growth acceptor defects, strain relaxation and defects ordering. After 6 months the measurements have shown that the characteristics of the devices have recovered to initial values indicating the restoration of the original state of the substrate crystal structure.

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