Persons

Бычков Даниил Владимирович
PhD student of the Nanoelectronics Department, Moscow Institute of Radio Engineering, Electronics and Automation – Russian Technological University (Russia, 119454, Moscow, Vernadsky ave., 78); Leading Process Engineer, JSC Pluton (Russia, 105120, Moscow, Nizhnyaya Syromyatnicheskaya st., 11)

Article author

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