Persons

Some features of the 3D silicon structures formation by locally formation of porous silicon as a sacrificial layer have been studied. It has been formed by metal-assisted chemical etching of a single crystal wafer of Si with silver films (50 and 100 nm) as a catalyst. The influence of ionic Ag mass transfer, caused by the temperature gradient, on the surface morphology of the formed structure according to the linear size of the mask-catalyst has been determined.

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The results of studies on the film composites, based on polyvinylidene fluoride with the carbon nanotubes, by the dielectric relaxation spectroscopy have been presented. For the composite samples with the content of nanotubes exceeding 0.5 wt% the nonlinear current-voltage characteristics have been obtained. The concentration dependences of conductivity of the composites have been studied and, also, the percolation threshold for the samples being investigated has been determined. It has been shown that an insignificant increase of the composites electric conductivity is observed even at 0.2 wt%, while introducing 1 wt% of nanotubes the electrical conductivity becomes 3 orders higher and at more than 3 wt% it is 7 orders higher compared to the non-filled polymer. This verifies the perspectives of using the carbon nanotubes for creation of the electro-conducting composites and film materials based on polyvinylidene fluoride.

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The results of the investigated sensory properties of the zinc oxide films (ZnO), obtained by the sol-gel technology, have been presented. It has been shown that the variation of the films resistance during the repeated thermal cycling is in the temperature range of 50 - 500 °C, under conditions of the different relative humidity it is (7.5 - 90%) when exposed to the nitrogen oxides (NO and NO).

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