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For creating DRAM and flash-memory alternative of existing element base there are the memristive structures, based on resistance switching. In the paper the results of the study of formation features of creating the memristive structures based on copper sulfide as one of the promising materials, providing an increased efficiency of the structures, have been presented. Using a scanning electron microscope the process of the copper sulfurization in the «chemical bath», in which the near-surface region of the copper layer was transformed to sulfurization and the rest part of the layer was used as an active electrode of the formed further memristive structure, has been considered. It has been shown that with increased concentrations of the initial chemical reagents the roughness of the sulfide layer surface significantly increases. The sulfide growth speed with optimal initial concentrations of the chemical reagents is ~ 30 nm/min. In the investigation of the memristive structures it has been found that with increasing the copper sulfide thickness the resistance ratio in the low-resistance and high-resistance states grows from 11.2 to 12.5. The switching time in the formed memristor structures from the high-resistance state to the low-resistance one is about 1.3 µs, and from the low-resistance to high-resistance state it is 0.9 µs.

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