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Influence of Design Parameters of Submicron HEMT Transistors on Upper Boundary of Amplifier Linearity Dynamic Range

The dependence of the dynamic range upper boundary has been investigated with respect to linearity and noise characteristics of the HEMT transistors with the direct structure on the geometrical parameters has been investigated. An optimization of the transistor parameters for the purpose to improve the characteristics of the amplifiers based on this transistor has been proposed.

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