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The calculation of characteristics of the MIS varicap with the charge transfer, designed to operate in control devices of SHF range, has been carried out. It has been shown that the limiting frequency of the device is at least 2 times higher as compared to the standard MIS varicap based on the MIS system with a thicker dielectric in the varicap with the charge transfer. The measurement methods of the device parameters of SHF range have been developed. The device samples based on thin substrates of monocrystalline silicon with the epitaxial layers have been produced. The correspondence of the varicap theoretical and experimental characteristics has been determined.

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