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The main technical characteristics of the automated radiation effects simulation facility based on the wavelength tunable solid state picosecond laser have been presented. Its design features, capabilities and advantages aimed at the simulation of the single event effects for the space environment in modern Si, GaAs, SiC, etc microelectronic devices have been discussed.
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When determining the SEE cross section in ICs by the local laser irradiation methods an error caused by the laser beam spot size effect can arise. The method of the SEE cross section correction, taking into account the spot size effect, has been considered.
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