The analytical model has been proposed and the simulation of the energy losses in IC sensitive microvolume of VLSI elements with the account of surrounding materials has been carried out. The developed model for the evaluation of the local radiation ...
The researches directed at the correlation revealing between the radhard integrated circuits technological process instability and their radiating sensitivity have been carried out. The influence of the epilayer thickness and conductivity, the active...
The basic technology of the microelectronic devices radiation hardness prediction, estimation and measurement, which had proved the high scientific and practical value for all of design and production stages of special devices, has been described. Th...