The analytical model has been proposed and the simulation of the energy losses in IC sensitive microvolume of VLSI elements with the account of surrounding materials has been carried out. The developed model for the evaluation of the local radiation ...
The researches directed at the correlation revealing between the radhard integrated circuits technological process instability and their radiating sensitivity have been carried out. The influence of the epilayer thickness and conductivity, the active...
The basic technology of the microelectronic devices radiation hardness prediction, estimation and measurement, which had proved the high scientific and practical value for all of design and production stages of special devices, has been described. Th...
A comprehensive RF and microwave characterization technique for ICs packages has been presented. The discussed technique is based on a full-wave numerical simulation and vector measurements. The model parameters and the maximum frequency of using hom...
The design considerations for passive and active vector silicon-based monolithic microwave phase shifters for Phased Array Radar application have been presented. It has been shown that the use of the active vector phase shifters provides a significan...
The adequacy of the laser based dose rate effects simulation in IC's may be disturbed due to metallization shadowing. It has been shown that the optical diffraction can limit the laser dose rate simulation at 0.18μm technology level.
The formation conditions and the methods to detect the multiple-bit upsets in static random access memory caused by single charged particles of space have been determined. The topical problems, which solution is necessary for development of the fault...
The model for determining the threshold values of the critical charges of the two-phase CMOS inverters upset under effect of the photo current pulse, depending on the capacitance coupling of the differential input (output) interconnectors, has been p...
The DC-DC converters TID and SEE response model has been proposed. It has been shown that the model includes the main functional units. The model permits to determine the extent of the effect of the dose degradation and ionization response of the mai...
The main technical characteristics of the automated radiation effects simulation facility based on the wavelength tunable solid state picosecond laser have been presented. Its design features, capabilities and advantages aimed at the simulation of th...
The principle of the monitoring center construction for the radiation test facility based on the Internet technologies, which allows an online visual monitoring of the radiation testing procedure, recoding and storage of the initial results and measu...
When determining the SEE cross section in ICs by the local laser irradiation methods an error caused by the laser beam spot size effect can arise. The method of the SEE cross section correction, taking into account the spot size effect, has been cons...
The most commonly used methods and facilities for electronic component base SEE testing have been discussed. The main limitations of these methods and devices applicability have been presented. The recommendations on the choice of composition and seq...
An approach to development of the digital CMOS IC's functional and parametric control in the tests on resistance to the single nuclear particles effect, allowing and improvement of the confidence of the independent detection of single-event upsets an...
The structure of the hardware-software system for the radiation tests of the electronic component base, which has been realized based on the National Instruments hardware platform and the LabView programming environment, has been considered. The comp...
Based on the numerical electrothermal simulation the dependencies of the heating nature of the CMOS microcircuits elements, manufactured according to different technologies under single voltage pulse, caused by the electromagnetic radiations effect, ...