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Transmission electron microscopy and high-resolution electron microscopy methods used to study multilayered heterocompositions don’t allow for effective studying of amorphous materials and require the analysis of many local zones in case of specimens that consist of separate crystallites. In this work, a multilayered heterocomposition, which is a phase-shifting photomask consisting of nanoscale thickness layers on the surface of a glass substrate, is studied. Focused ion beam methods were used to make a preparation of normal and longitudinal cross section thin foils. Normal cross section foil prepared using standard approaches allowed for layers visualization, thickness measurement and composition analysis. It was demonstrated that a 93 nm thick amorphous layer of Mo0.06Si0.31N0.63 is formed on the SiO2 substrate, which is successively covered by polycrystalline layers of Cr0.56N0.44, Cr0.74C0.06N0.2 and Cr0.4N0.26O0.3 with thicknesses of 22, 37 and 8 nm, respectively. Longitudinal cross section foil prepared at a slight inclination to the surface of the photomask made it possible to form sections of all layers with dimensions sufficient for their study by electron microdiffraction. The performed phase analysis has confirmed the amorphous structure of the substrate and the Mo0.06Si0.31N0.63 layer, and also has shown that the polycrystalline Cr0.56N0.44, Cr0.74C0.06N0.2 and Cr0.4N0.26O0.3 layers are formed by crystallites with a cubic lattice and parameters 3.92, 4.18 and 4.12 Å, respectively.

Key words: nanostructures, transmission electron microscopy, electron microdiffraction, focused ion beam
Published in: FUNDAMENTAL RESEARCHES
Bibliography link: Volkov R. L., Borgardt N. I. Multilayered nanoscale heterocompositions structure study using transmission electron microscopy. Proc. Univ. Electronics, 2023, vol. 28, no. 6, pp. 711–726. https://doi.org/10.24151/1561-5405-2023-28-6-711-726
Financial source: The work has been supported by the Ministry of Education and Science of the Russian Federation within the framework of the state task (Agreement FSMR-2023-0014) and using the equipment of the CCP “Diagnostics and modification of microstructures and nanoobjects”.

Roman L. Volkov
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Nikolay I. Borgardt
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

1. Kitui M., Mwamburi M. M., Gaitho F., Maghanga C. M. Optical properties of TiO2 based multilayer thin films: Application to optical filters // Int. J. Thin Film Sci. Technol. 2015. Vol. 4. Iss. 1. P. 17-21.

2. SiOyNx/SiNx stack anti-reflection coating with PID-resistance for crystalline silicon solar cells / C. Zhou, J. Zhu, S. E. Foss et al. // Energy Procedia. 2015. Vol. 77. P. 434-439. DOI: 10.1016/j.egypro.2015.07.061

3. Near-perfect selective photonic crystal emitter with nanoscale layers for daytime radiative cooling / K. Yao, H. Ma, M. Huang et al. // ACS Appl. Nano Mater. 2019. Vol. 2. No. 9. P. 5512-5519. DOI: 10.1021/acsanm.9b01097

4. TiO2/Cu2O/CuO multi-nanolayers as sensors for H2 and volatile organic compounds: An experimental and theoretical investigation / O. Lupan, D. Santos-Carballal, N. Ababii et al. // ACS Appl. Mater.Interfaces. 2021. Vol. 13. Iss. 27. P. 32363-32380. DOI: 10.1021/acsami.1c04379 EDN: ATPPNP

5. Controlling crystal orientation in multilayered heterostructures toward high electro-catalytic activity for oxygen reduction reaction / Y. Zheng, Y. Li, T. Wu et al. // Nano Energy. 2019. Vol. 62. P. 521-529. DOI: 10.1016/j.nanoen.2019.05.069

6. Suppression of SnS2 secondary phase on Cu2ZnSnS4 solar cells using multi-metallic stacked nanolayers / F.-I. Lai, J.-F. Yang, J.-E. Li et al. // Nanomaterials. 2023. Vol. 13. Iss. 3. Art. No. 432. DOI: 10.3390/nano13030432 EDN: SGGOEW

7. Исследование структуры и состава напряженного эпитаксиального слоя в гетерокомпозиции InAlAs/GaAs (100) методами просвечивающей электронной микроскопии / М. В. Ловыгин, Н. И. Боргардт, А. С. Бугаев и др. // Изв. вузов. Электроника. 2015. Т. 20. № 4. С. 431-439. EDN: UDUYXT
Lovygin M. V., Borgardt N. I., Bugaev A. S., Volkov R. L., Seibt M. Study of the structure and composition of the strained epitaxial layer in the InAlAs/GaAs (100) heterostructure by transmission electron microscopy. Semiconductors, 2016, vol. 50, iss. 13, pp. 1753–1758. https://doi.org/10.1134/S1063782616130066

8. Сегнетоэлектрическая память: современное производство и исследования / Д. А. Абдуллаев, Р. А. Милованов, Р. Л. Волков и др. // Российский технологический журнал. 2020. Т. 8. № 5 (37). С. 44-67. -. DOI: 10.32362/2500-316X-2020-8-5-44-67 EDN: PHRTOP
Abdullaev D. A., Milovanov R. A., Volkov R. L., Borgardt N. I., Lantsev A. N., Vorotilov K. A., Sigov A. S. Ferroelectric memory: state-of-the-art manufacturing and research. Russian Technological Journal, 2020, vol. 8, no. 5 (37), pp. 44–67. (In Russian). https://doi.org/10.32362/2500316X2020854467. – EDN: PHRTOP.

9. Shubham K., Gupta A.Integrated circuit fabrication. Abingdon; Boca Raton, FL: CRC Press, 2021. 352 p.

10. Handbook of photomask manufacturing technology / ed. S. Rizvi. Boca Raton, FL: CRC Press, 2005. 728 p.

11. Mo/Si lamellar multilayer gratings with high efficiency and enhanced resolution for the X-ray region of 1000-1700 eV / Y. Feng, Q. Huang, Y. Zhuang et al. // Optics Express. 2021. Vol. 29. Iss. 9. P. 13416-13427. DOI: 10.1364/OE.422483 EDN: TKGGOO

12. Determination of the layered structure in Mo/Si multilayers by grazing incidence X-ray reflectometry / A. E. Yakshin, E. Louis, P. C. Görts et al. // Phys. B: Condens. Matter. 2000. Vol. 283. Iss. 1-3. P. 143-148. DOI: 10.1016/S0921-4526(99)01909-2 EDN: YEPRXW

13. Braun W. Applied RHEED: reflection high-energy electron diffraction during crystal growth. Berlin; Heidelberg: Springer, 1999. IX, 220 p. DOI: 10.1007/BFb0109548

14. ToF-SIMS: materials analysis by mass spectrometry / eds J. C. Vickerman, D. Briggs. Chichester: IM Publications; Manchester: SurfaceSpectra, 2013. 732 p.

15. Chang C. C. Auger electron spectroscopy // Surf. Sci. 1971. Vol. 25. Iss. 1. P. 53-79.

16. Scanning electron microscopy and X-ray microanalysis /j. I. Goldstein, D. E. Newbury, J. R. Michael et al. 4th ed. New York: Springer, 2017. XXIII, 550 p. DOI: 10.1007/978-1-4939-6676-9

17. Magonov S. N., Whangbo M.-H. Surface analysis with STM and AFM: Experimental and theoretical aspects of image analysis. Weinheim; New York; Basel: VCH, 1996. 335 p. DOI: 10.1002/9783527615117 EDN: YCQJZN

18. Transmission electron microscopy: Diffraction, imaging, and spectrometry / eds C. B. Carter, D. B. Williams. Cham: Springer, 2016. XXXIII, 518 p. DOI: 10.1007/978-3-319-26651-0

19. Introduction to focused ion beams: Instrumentation, theory, techniques and practice / eds L. A. Giannuzzi, F. A. Stevie. New York: Springer, 2004. XVII, 357 p. DOI: 10.1007/b101190

20. Electron microscopy studies of crystallites in carbon nanopillars grown by low-temperature plasma-enhanced chemical-vapor deposition / Y. S. Grishina, N. I. Borgardt, R. L. Volkov et al. // J. Surf. Investig. 2017. Vol. 11. P. 226-233. DOI: 10.1134/S102745101701027X EDN: YVOCAN

21. Onset temperatures and kinetics of quartz glass crystallization / A. I. Nepomnyashchikh, A. A. Shalaev, T. Yu. Sizova et al. // Crystallogr. Rep. 2018. Vol. 63. P. 290-294. DOI: 10.1134/S1063774518020153 EDN: METZVB

22. Transmission electron microscopy study of silicon nitride amorphous films obtained by reactive pulsed laser deposition / V. S. Teodorescu, L. C. Nistor, M. Popescu et al. // Thin Solid Films. 2001. Vol. 397. Iss. 1-2. P. 12-16. DOI: 10.1016/S0040-6090(01)01408-0 EDN: LSLREX

23. Characterisation of amorphous molybdenum silicide (MoSi) superconducting thin films and nanowires / A. Banerjee, L. J. Baker, A. Doye et al. // Supercond. Sci. Technol. 2017. Vol. 30. No. 8. Art. No. 084010. DOI: 10.1088/1361-6668/aa76d8 EDN: VPPZPN

24. Kattelus H., Ylönen M., Blomberg M. Amorphous Mo-N and Mo-Si-N films in microelectromechanical systems // Fatigue & Fracture of Engineering Materials & Structures. 2005. Vol. 28. Iss. 8. P. 743-749. DOI: 10.1111/j.1460-2695.2005.00887.x EDN: MIHBVP

25. Blix R. Röntgenanalyse des Chrom-Stickstoffsystems nebst einer orientierenden Konstitutionsuntersuchung des stickstoffhaltigen Ferrochroms // Zeitschrift für Physikalische Chemie. 1929. Bd. 3B. No. 1. S. 229-239. DOI: 10.1515/zpch-1929-0317

26. Bennett J. C., Egerton R. F. NiO test specimens for analytical electron microscopy: Round-robin results // Microscopy and Microanalysis. 1995. Vol. 1. Iss. 4. P. 143-149. DOI: 10.1017/S1431927695111435 EDN: HLAYZR
27. Mitchell D. R. G. DiffTools: Electron diffraction software tools for DigitalMicrograph // Microsc. Res. Tech. 2008. Vol. 71. Iss. 8. P. 588-593. DOI: 10.1002/jemt.20591

28. Mitchell D. R. G., Van den Berg J. A. Development of an ellipse fitting method with which to analyse selected area electron diffraction patterns // Ultramicroscopy. 2016. Vol. 160. P. 140-145. DOI: 10.1016/j.ultramic.2015.10.009

29. Mitchell D. R. G., Schaffer B. Scripting-customised microscopy tools for Digital Micrograph // Ultramicroscopy. 2005. Vol. 103. Iss. 4. P. 319-332. DOI: 10.1016/j.ultramic.2005.02.003 EDN: KJYLWN

30. Hammersley A. P. FIT2D: a multi-purpose data reduction, analysis and visualization program //j. Appl. Cryst. 2016. Vol. 49 (2). P. 646-652. DOI: 10.1107/S1600576716000455

31. Wojdyr M. Fityk: a general-purpose peak fitting program // J. Appl. Cryst. 2010. Vol. 43 (5). No. 1. P. 1126-1128. DOI: 10.1107/S002188981003049927

32. MAUD Rietveld refinement software for neutron diffraction texture studies of single- and dual-phase materials / A. I. Saville, A. Creuziger, E. B. Mitchell et al. // Integr. Mater. Manuf. Innov. 2021. Vol. 10. Iss. 3. P. 461-487. DOI: 10.1007/s40192-021-00224-5 EDN: ZPZJBH

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Publication type: Scientific article
DOI: 10.24151/1561-5405-2023-28-6-711-726
RISC id: QGSIPY

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