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Articles

  • The techniques for forming the nanoscale elements of gate of the power microwave transistor, based on the AlN/GaN heterostructures, have been developed. The optimal parameters of exposure of 950-polymethylmethacrylate (PMMA) and ELP-20 have been defi...

Authors: Kirill K. Lavrentyev, Vladimir K. Nevolin, Roman Yu. Rozanov, Konstantin A. Tsarik , Alexey A. Zaitsev
591 - 597
  • To explain the current dependencies of the mean square of the low-frequency noise of green InGaN light emitting diodes, the double stage low-frequency noise equivalent circuit of LED has been offered. It has been shown that the non-monotonic dependen...

Authors: Viacheslav A. Sergeev, Ilya V. Frolov , Aleksey A. Shirokov
598 - 606
  • Using the methods of finite elements and conformal mappings the analytical models of the low resistance film resistors of the main types of comb (interdigital) structures with arbitrary relations of the specific resistances of resistive and conductiv...

Authors: Viktor D. Sadkov, Aleksandr V. Lopatkin
607 - 615

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