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Revealing the regularities of the interaction of accelerated ions with the irradiated material based on the Monte Carlo simulation contributes to the efficient application of the focused ion beam technique in modern nanotechnologies. The correctness of the calculation results depends on the model and parameters determining the surface binding energy of the sputtered atoms. In this work, to find the surface binding energy a discrete-continuous model was used allowing the consideration of gallium precipitates formation upon irradiation of a silicon substrate with gallium ions. To compare the simulation results with the experimental data by the focused ion beam technique, two types of rectangular boxes were prepared. The structures of the first type were formed at the same dose close to 5 ∙ 1017 cm–2, corresponding to the steady-state sputtering regime, and at accelerating voltages of 8, 16 and 30 kV. The structures of the second type were formed at an ion energy of 30 keV and doses of 2.5 ∙ 1016; 5 ∙ 1016; 1 ∙ 1017 cm–2. The cross sections of the boxes were examined by transmission electron microscopy. The sputtering yield and depth distribution profiles of gallium atoms calculated in the SDTrimSP 5.07 software pack-age were compared with the experimental data using the R factor. Two sets of values have been established for the variable parameters: the surface binding energy of gallium atoms and the a1 parameter of the discrete-continuous model. The first set describes the experimental data with acceptable accuracy for a small number of implanted gallium atoms, which is realized for low doses of ions, as well as for beam energy of 8 keV and a dose of 5 ∙ 1017 cm–2. The second set is optimal for description of ion beam interaction with substrate at ion energies of 16 and 30 keV in the steady sputtering regime.

Key words: focused ion beam, sputtering, silicon, Monte Carlo simulation
Published in: Technological processes and routes
Bibliography link: Podorozhniy O. V., Rumyantsev A. V., Volkov R. L., Borgardt N. I. Simulation of material sputtering and gallium implantation during focused ion beam irradiation of silicon substrate. Proc. Univ. Electronics, 2023, vol. 28, no. 5, pp. 555–568. https://doi.org/10.24151/1561-5405-2023-28-5-555-568. – EDN: ZCQJUF.
Financial source: the work has been supported by the Russian Science Foundation (project no. 21-79-00197) using the shared equipment of the Collective-Use Center “Diagnostics and Modification of Microstructures and Nanoobjects”.

Oleg V. Podorozhniy
Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

Alexander V. Rumyantsev
Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

Roman L. Volkov
Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

Nikolay I. Borgardt
Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

1. Priolo F., Gregorkiewicz T., Galli M., Krauss T. F. Silicon nanostructures for photonics and photovoltaics // Nature Nanotech. 2014. Vol. 9. Iss. 1. P. 19–32. https://doi.org/10.1038/nnano.2013.271

2. Self-organized nanopatterning of silicon surfaces by ion beam sputtering / J. Muñoz-García, L. Vázquez, M. Castro et al. // Materials Science and Engineering: R: Reports. 2014. Vol. 86. P. 1–44. https://doi.org/10.1016/j.mser.2014.09.001

3. Garg V., Mote R. G., Fu J. Rapid prototyping of highly ordered subwavelength silicon nanostructures with enhanced light trapping // Optical Materials. 2019. Vol. 94. P. 75–85. https://doi.org/10.1016/ j.optmat.2019.05.020

4. Chiral visible light metasurface patterned in monocrystalline silicon by focused ion beam / M. V. Gorkunov, O. Y. Rogov, A. V. Kondratov et al. // Sci. Rep. 2018. Vol. 8. Iss. 1. Art. No. 11623. https://doi.org/10.1038/s41598-018-29977-4

5. Langridge M. T., Cox D. C., Webb R. P., Stolojan V. The fabrication of aspherical microlenses using focused ion-beam techniques // Micron. 2014. Vol. 57. P. 56–66. https://doi.org/10.1016/j.micron.2013.10.013

6. Controlling the parameters of focused ion beam for ultra-precise fabrication of nanostructures / A. S. Kolomiytsev, A. L. Gromov, O. I. Il’in et al. // Ultramicroscopy. 2022. Vol. 234. Art. No. 113481. https://doi.org/10.1016/j.ultramic.2022.113481

7. Stark Y., Frömter R., Stickler D., Oepen H. P. Sputter yields of single- and polycrystalline metals for application in focused ion beam technology // Journal of Applied Physics. 2009. Vol. 105. Iss. 1. Art. No. 013542. https://doi.org/10.1063/1.3056161

8. Inverse modeling of FIB milling by dose profile optimization / S. Lindsey, S. Waid, G. Hobler et al. // Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2014. Vol. 341. P. 77–83. https://doi.org/10.1016/j.nimb.2014.09.006

9. Borgardt N. I., Volkov R. L., Rumyantsev A. V., Chaplygin Yu. A. Simulation of material sputtering with a focused ion beam // Tech. Phys. Lett. 2015. Vol. 41. P. 610–613. https://doi.org/10.1134/ S106378501506019X

10. Gnaser H., Reuscher B., Brodyanski A. Focused ion beam implantation of Ga in nanocrystalline diamond: Fluence-dependent retention and sputtering // Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2008. Vol. 266. Iss. 8. P. 1666–1670. https://doi.org/ 10.1016/j.nimb.2007.12.080

11. Gnaser H. Focused ion beam implantation of Ga in InP studied by SIMS and dynamic computer simulations // Surf. Interface Anal. 2011. Vol. 43. Iss. 1-2. P. 28–31. https://doi.org/10.1002/sia.3398

12. Румянцев А. В., Подорожний О. В., Волков Р. Л., Боргардт Н. И. Моделирование процесса распыления карбида кремния фокусированным пучком ионов галлия // Изв. вузов. Электроника. 2022. Т. 27. № 4. С. 463–474. https://doi.org/10.24151/1561-5405-2022-27-4-463-474

13. Gnaser H., Brodyanski A., Reuscher B. Focused ion beam implantation of Ga in Si and Ge: Fluence-dependent retention and surface morphology // Surf. Interface Anal. 2008. Vol. 40. Iss. 11. P. 1415–1422. https://doi.org/10.1002/sia.2915

14. Borgardt N. I., Rumyantsev A. V., Volkov R. L., Chaplygin Yu. A. Sputtering of redeposited material in focused ion beam silicon processing // Mater. Res. Express. 2018. Vol. 5. No. 2. Art. No. 025905. https://doi.org/10.1088/2053-1591/aaace1

15. Rumyantsev A. V., Borgardt N. I., Volkov R. L. Simulation of redeposited silicon sputtering under focused ion beam irradiation // J. Surf. Investig. 2018. Vol. 12. P. 607–612. https://doi.org/ 10.1134/S1027451018030345

16. Angular dependences of silicon sputtering by gallium focused ion beam / V. I. Bachurin, I. V. Zhuravlev, D. E. Pukhov et al. // J. Surf. Investig. 2020. Vol. 14. P. 784–790. https://doi.org/ 10.1134/S1027451020040229

17. Liedke B., Heinig K.-H., Möller W. Surface morphology and interface chemistry under ion irradiation – Simultaneous atomistic simulation of collisional and thermal kinetics // Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2013. Vol. 316. P. 56–61. https://doi.org/10.1016/j.nimb.2013.08.036

18. Kudriavtsev Y., Villegas A., Godines A., Asomoza R. Calculation of the surface binding energy for ion sputtered particles // Applied Surface Science. 2005. Vol. 239. Iss. 3-4. P. 273–278. https://doi.org/10.1016/ j.apsusc.2004.06.014

19. Sputtering of surfaces by ion irradiation: A comparison of molecular dynamics and binary collision approximation models to laboratory measurements / L. S. Morrissey, O. J. Tucker, R. M. Killen et al. // Journal of Applied Physics. 2021. Vol. 130. Iss. 1. Art. No. 013302. https://doi.org/10.1063/5.0051073

20. Modelling of sputtering yield amplification in serial reactive magnetron co-sputtering / T. Kubart, R. M. Schmidt, M. Austgen et al. // Surface and Coatings Technology. 2012. Vol. 206. Iss. 24. P. 5055–5059. https://doi.org/10.1016/j.surfcoat.2012.06.005

21. Solar wind ion sputtering of sodium from silicates using molecular dynamics calculations of surface binding energies / L. S. Morrissey, O. J. Tucker, R. M. Killen et al. // ApJL. 2022. Vol. 925. No. 1. Art. ID: L6. https://doi.org/10.3847/2041-8213/ac42d8

22. Mayer J., Giannuzzi L. A., Kamino T., Michael J. TEM sample preparation and FIB-induced damage // MRS Bulletin. 2007. Vol. 32. Iss. 5. P. 400–407. https://doi.org/10.1557/mrs2007.63

23. Comprehensive study of focused ion beam induced lateral damage in silicon by scanning probe microscopy techniques / M. Rommel, G. Spoldi, V. Yanev et al. // J. Vac. Sci. Technol. B. 2010. Vol. 28. Iss. 3. P. 595–607. https://doi.org/10.1116/1.3431085

24. SDTrimSP Version 5.05 / A. Mutzke, R. Schneider, W. Eckstein et al. Garching: IPP, 2015. 70 p.

25. Eckstein W. Computer simulation of ion-solid interactions. Berlin; Heidelberg: Springer, 2013. XI, 296 p. https//doi.org/10.1007/978-3-642-73513-4

26. Lindsey S., Hobler G. Sputtering of silicon at glancing incidence // Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2013. Vol. 303. P. 142–147. https://doi.org/10.1016/j.nimb.2012.12.087

27. Hofsäss H., Stegmaier A. Binary collision approximation simulations of ion solid interaction without the concept of surface binding energies // Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2022. Vol. 517. P. 49–62. https://doi.org/10.1016/ j.nimb.2022.02.012

28. Guénolé J., Prakash A., Bitzek E. Influence of intrinsic strain on irradiation induced damage: The role of threshold displacement and surface binding energies // Materials and Design. 2016. Vol. 111. P. 405–413. https://doi.org/10.1016/j.matdes.2016.08.077

Information about the publication

UDK: 537.534.35
Publication type: Scientific article
Source lang: Russian
DOI: 10.24151/1561-5405-2023-28-5-555-568
RISC id: ZCQJUF

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