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The MOSFETs are marked by the ability to commutate high currents (tens to hundreds amperes) with high frequency. With that the dissipated power reaches 1 kW. Due to this it is required to assure effective dissipation of heat from active area of the crystal and to develop appropriate means of junction–case thermal resistance control. In this work, the results of studies of the thermoelectric properties of high-power MOSFETs are presented. The studies were carried out using a hardware-software complex, in which, along with the standard methods for measuring the junction–case thermal resistance, a modulation method was implemented that uses the heating of an object by heating current pulses with a harmonic pulse-width modulation law. To measure the temperature of the active area in the pauses between the heating pulses, the temperature-sensitive, or thermometric, parameter was measured, which was the source–drain voltage. To eliminate the impact of transient electrical processes on the results of thermal resistance measurements, the temperature-sensitive parameter values were extrapolated to the end of each heating pulse. For extrapolation, it is proposed to use the root and logarithmic laws of the change in the temperature-sensitive parameter in the process of cooling the transistor crystal after its pulsed heating. It has been demonstrated that the results of measurements of the thermal resistance components obtained by various methods are in good agreement with each other.

Key words: power transistors, thermal resistance, modulation method, transient thermal response, hardware-software complex
Published in: INTEGRATED ELECTRONICS ELEMENTS
Bibliography link: Smirnov V. I., Gavrikov A. A. Study of the thermoelectric properties of powerful MOSFETs. Proc. Univ. Electronics, 2023, vol. 28, no. 5, pp. 600–611. https://doi.org/10.24151/1561-5405-2023-28-5-600-611. – EDN: TQEMOG.
Financial source: the work has been supported by Russian Science Foundation (project no. 23-29-00026).

Vitaliy I. Smirnov
Ulyanovsk State Technical University, Russia, 432027, Ulyanovsk, Severny Venets st., 32); Ulyanovsk branch of Kotel’nikov Institute of Radio Engineering and Electronics of Russian Academy of Sciences, Russia, 432071, Ulyanovsk, Goncharov st., 48, bld. 2)

Andrey A. Gavrikov
Ulyanovsk branch of Kotel’nikov Institute of Radio Engineering and Electronics of Russian Academy of Sciences, Russia, 432071, Ulyanovsk, Goncharov st., 48, bld. 2)

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UDK: 681.518.3
Publication type: Scientific article
Source lang: Russian
DOI: 10.24151/1561-5405-2023-28-5-600-611
RISC id: TQEMOG

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