A two-step MOCVD-hydride method of fabricating GaN layers has been investigated. Some issues of doping the layers by donor and acceptor impurities have been studied. The laws of the influence of technological modes on the growth rate, structure and t...
The distributions of the electrical potential in the bulk of the five-diode vertically integrated photo-receiving structure have been studied. The spectral photosensitivities of five regions of the conductivity different types have been obtained. The...
The results of the experimental investigation of Ni-n-n+-In fabricated from the low-resistance ZnS:AI (n+-area) have been presented. A compensated high-resistance n-layer was obtained by thermodiffusion of Ag. The photodiodes have the injecting ampli...