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The development of flexible thermoelectric generators – alternative energy sources – using screen printing technology is a promising direction. Currently, low-temperature thermoelectric materials based on Bi-Te-Se and Bi-Te-Sb are used for manufacturing of these generators. The introduction of nanodispersed highly conductive copper oxide CuO powder allows the improvement of thick-film samples’ characteristics. However, the thermal stability of such materials has not been studied to date. In this work, thermal properties and stability of thick films on the basis of Bi-Te-Se (n type) and Bi-Te-Sb (p type) doped with CuO are studied. It was determined that thick-film samples containing 0.1 % CuO as additive have the best thermoelectric characteristics. It was shown that in the investigated temperature range (from room temperature up to 550 K) they are stable, there are no strong thermal effects nor change in the mass of the samples. In addition, multiple measurements do not lead to phase separation or other undesirable processes. It has been established that thick films on the basis of Bi-Te-Sb and Bi-Te-Se low-temperature thermoelectric materials modified by copper oxide additives can be used for flexible thermoelectric devices manufacturing.

Key words: thermoelectricity, thermal properties, stability, thermoelectric generator, TEG
Published in: ELECTRONICS MATERIALS
Bibliography link: Babich A. V., Voloshchuk I. A., Sherchenkov A. A., Pereverzeva S. Yu., Glebova D. D., Babich T. A. Thermal stability of thick films on the basis of Bi-Te-Se and Bi-Te-Sb low-temperature thermoelectric materials modified by copper oxide additives. Proc. Univ. Electronics, 2023, vol. 28, no. 3, pp. 281–286. https://doi.org/ 10.24151/1561-5405-2023-28-3-281-286. – EDN: WTAKOX.
Financial source: the work has been supported by the Russian Science Foundation (project no. 21-19-00312 (synthesis of the materials), project no. 18-79-10231 (formation of the samples and their characterization)).

Alexey V. Babich
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

Irina A. Voloshchuk
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

Alexey A. Sherchenkov
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

Svetlana Yu. Pereverzeva
SMC “Technological Centre”, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

Daria D. Glebova
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

Tatyana A. Babich
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

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UDK: [621.382:537.32]:621.362
Publication type: Scientific article
Source lang: Russian
DOI: 10.24151/1561-5405-2023-28-3-281-286
RISC id: WTAKOX

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