Active research of the GeSbTe material (GST225) is connected with the possibility of creating multi-level non-volatile elements for high-speed integrated optical functional circuits. The principle of multi-level recording in these devices is based on...
The power of the HEMT-transistors on the substrate from silicon achieves 100 W, on the substrate from silicon carbide - 1.5 kW. This presents high requirements to the quality of heat removal from the crystal active region to case and further to the e...
During development of the secondary power supplies the most important components are increased efficiency and reduced weight and size parameters. In the paper the power transistor switching algorithms intended for use in the power supplies, equipped ...