Active research of the GeSbTe material (GST225) is connected with the possibility of creating multi-level non-volatile elements for high-speed integrated optical functional circuits. The principle of multi-level recording in these devices is based on...
The power of the HEMT-transistors on the substrate from silicon achieves 100 W, on the substrate from silicon carbide - 1.5 kW. This presents high requirements to the quality of heat removal from the crystal active region to case and further to the e...
During development of the secondary power supplies the most important components are increased efficiency and reduced weight and size parameters. In the paper the power transistor switching algorithms intended for use in the power supplies, equipped ...
The currently achieved high level of digitizing the up-to-date monitoring of radiolocation complexes (RCM) and availability of the built-in control system, registering the data on the technical state of the components, permits one to switch to foreha...
Development of technical systems for artificial blood purification is one of the promising areas of biomedical engineering. System analysis approach is used to create wearable artificial kidney. Investigation of dialysate regeneration methods and mul...
The well-known methods of solving the problem of stereovision called three-dimensional scene reconstruction assume a time-consuming process of preliminary calibration of cameras. In the paper, an approach to solving the formulated problem, not requir...
One way to obtain perfect nitride structures for microelectronics is to use the atomic layer epitaxy growth method. The paper considers the influence on the growth dynamics and uniformity of the distribution of the deposited gallium nitride (GaN) lay...
One of the solutions to the problem of accumulating of polyethylene packaging at solid waste landfills is usage of modified polyethylene. The decomposition of such polyethylene under natural conditions permits to reduce the damage from the environmen...