The devices based on SOI CMOS transistors are characretized by high performance, increased radiation resistance, and the ability to operate at elevated temperatures. However, such devices have a negative effect – a floating body. It significantly affects the parameters of the device, in particular the stability of operation, the mobility of carriers in the channel, the threshold voltage, the leakage current, and leads to the appearance of a parasitic bipolar transistor and a kink effect. In this work, the influence of floating body effects on the characteristics of SOI CMOS transistors is researched for various design options of the device. The SPICE parameters of the device were extracted, based on this a compact model of SOI CMOS transistor was created and its reliability checked. Using the developed model, a compact simulation of SOI CMOS transistor was carried out and regularities of the influence of the channel length and width, as well as the value of floating body potential, on the threshold voltage and the occurrence of the kink effect were determined. It has been established that the parasitic effects of the floating body critically affect the main characteristics of the device. Calculation and experimental studies have shown a significant effect of the geometric parameters of the transistor and the floating body potential on the threshold voltage and the occurrence of the kink effect, which limits the possibility of reducing the size of SOI CMOS VLSI elements.
-
Key words:
SOI MOSFET, compact model, compact simulation, floating body, parasitic effects, IV, threshold voltage, parasitic bipolar transistor, kink effect, impact ionization
-
Published in:
Integral electronics elements
-
Bibliography link:
Kirillova A. V., Korolev M. A. Research of the influence of floating body effects on SOI MOSFETs. Proc. Univ. Electronics, 2023, vol. 28, no. 2, pp. 180–188. https://doi.org/ 10.24151/1561-5405-2023-28-2-180-188
Anastasia V. Kirillova
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1; “Research Institute of Molecular Electronics” JSC, Russia, 124460, Moscow, Ze-lenograd, Akademik Valiev st., 6, bld. 1
1. Красников Г. Я., Горнев Е. С., Матюшкин И. В.
Общая теория технологии и микроэлектроника. Ч. 3: Уровень технологической операции // Электронная техника. Сер. 3. Микроэлектроника. 2018. № 3 (171). С. 63–93.
2. Vandana B. Study of floating body effect in SOI technology // International Journal of Modern Engineering Research (IJMER). 2013. Vol. 3. Iss. 3. P. 1817–1824.
3. Шипицин Д. С., Потупчик А. Г., Шемякин А. В., Яшин Г. А. Разработка способа учета особенностей ВАХ транзистора, работающего в переходном режиме от PDSOI/FDSOI в компактной модели // Наноиндустрия. 2020. Т. 13. № S4 (99). С. 362–365. https://doi.org/10.22184/1993-8578.2020.13.4s.362.365
4. Is there a kink effect in FDSOI MOSFETs? / H. J. Park, M. Bawedin, K. Sasaki et al. // 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). Athens: IEEE,
2017. P. 212–215. https://doi.org/10.1109/ULIS.2017.7962564
5. Park H., Lee K., Colinge J.-P., Cristoloveanu S. Is FD-SOI immune to floating body effects? // 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S). Burlingame, CA: IEEE, 2018. P. 1–3. https://doi.org/10.1109/S3S.2018.8640198
6. BSIMSOIv4.5.0 MOSFET model: user’s manual / BSIM group. Berkeley, CA: UC Department of EECS, 2013. 129 p.
7. Денисенко В. В. Компактные модели МОП-транзисторов для SPICE в микро- и наноэлектронике. М.: Физматлит, 2010. 409 с.
8. Wu W., Yao W., Gildenblat G. PSP-SOI: A surface-potential-based compact model of SOI MOSFETs // Compact modeling: Principles, techniques and applications / ed. G. Gildenblat. Dordrecht: Springer, 2010. P. 41–74. https://doi.org/10.1007/978-90-481-8614-3_2
9. Tsividis Y., McAndrew C. Operation and modeling of the MOS transistor. 3rd ed. Oxford: Oxford Univ. Press, 2011. 723 p.
10. Crisoloveanu S., Li Sh. S. Electrical characterization of silicon-on-insulator materials and devices. New York: Springer, 1995. XV, 381 p. (Springer International Series in Engineering and Computer Science). https://doi.org/10.1007/978-1-4615-2245-4