Nowadays, sandwich structures based on transition metal carbides or nitrides - MXenes - have demonstrated their unique characteristics in optics, electronics and photonics. Formation of elements with neuromorphic properties is a promising trend. In this work, the memristive effect in lateral structures based on MXenes Ti3C2T x is considered. The control of the formation of several current states in the conductivity of a MXene channel depending on the applied potential difference was experimentally studied. The structure is a film of MXene Ti3C2T x composition deposited by solution deposition between gold electrodes formed on the channel surface on a silicon substrate with200 nm thick silicon oxide. The obtained samples were analyzed by atomic force microscopy and Raman spectroscopy. It has been established that in these structures it is possible to form a given conductivity level, depending on the applied electric field. The observed change in the conductivity ratio is two orders of magnitude. Conductivity in structures with MXene is determined by trap states in the channel and persists for more than 5 min.
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Key words:
memristive effect, two-dimensional materials, MXene, conductivity control, two-dimensional channel
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Published in:
INTEGRATED ELECTRONICS ELEMENTS
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Bibliography link:
Yakunina N. V., Nekrasov N. P., Nevolin V. K., Bobrinetskiy I. I. Conductivity switching in lateral channels based on MXene Ti3C2Tx . Proc. Univ. Electronics, 2023, vol. 28, no. 1, pp. 88–95. https://doi.org/10.24151/1561-5405-2023-28-1-88-95
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Financial source:
the work has been supported by the Russian Science Foundation (project No. 19-19-00401). Acknowledgments: the authors express gratitude to Dmitry Kireev (University of Texas, Austin, USA) for providing the MXene structures and discussion of the results.
Natalia V. Yakunina
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
Nikita P. Nekrasov
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
Vladimir K. Nevolin
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
Ivan I. Bobrinetskiy
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
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