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High-speed operational amplifiers are widely used in quantum-optical systems and fast pulse recording equipment. High level of parameters of such products is provided due to application of modern technological routes of microcircuits manufacturing, containing complementary bipolar transistors with high cutoff frequency and small parasitic capacitance of collector. Currently there are no above-noted technological routes for microcircuits manufacturing. In this work, to meet the domestic market demand for radioelectronic equipment, two operational amplifiers on a master slice array МН2ХА031 with unified stages and the possibility of changing the parameters by selecting the resistance of current conducting resistors and the capacity of the balancing capacitor are presented. The circuit diagrams are described and the results of circuit modeling of two products are provided: OAmp9 high-speed operational amplifier with gain bandwidth product of over 600 MHz, output voltage rise rate of over 400 V/µs with static parameters corresponding to operational amplifiers of general application, and OAmp10 low-noise precision amplifier with gain of about 2·106, offset voltage less than 50 µV and spectral noise floor relative to the input of about 1 nV/Hz0.5. The directions of further modernization of the developed amplifiers have been formulated, including in particular the reduction of parasitic collector capacitance of transistors by design engineering and reverse bias voltage, the application of nonlinear correction circuits, which allow approaching the amplifiers’ performance in a large signal mode to a low-signal mode.
Oleg V. Dvornikov
“Minsk Scientific Research Instrument-Making Institute” JSC (Belarus, 220113, Minsk, Yakub Kolas st., 73)
Vladimir A. Tchekhovski
Belarusian State University (Belarus, 220045, Minsk, Akademik Kurchatov st., 7)
Nikolay N. Prokopenko
Don State Technical University (Russia, 344000, Rostov-on-Don, Gagarin sq., 1); Institute for Design Problems in Microelectronics of the Russian Academy of Sciences (Russia, 124365, Moscow, Zelenograd, Sovetskaya st., 3)
Yaroslav D. Galkin
Belarusian State University (Belarus, 220045, Minsk, Akademik Kurchatov st., 7); Belarusian State University of Informatics and Radioelectronics (Belarus, 220013, Minsk, Petrus Brovka st., 6)
Alexey V. Kunts
Belarusian State University (Belarus, 220045, Minsk, Akademik Kurchatov st., 7); Belarusian State University of Informatics and Radioelectronics (Belarus, 220013, Minsk, Petrus Brovka st., 6)
Vladislav E. Chumakov
Don State Technical University (Russia, 344000, Rostov-on-Don, Gagarin sq., 1)

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