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Thin films of the Ge2Sb2Te5 (GST) material are characterized by high rate of phase transformations (< 50 ns) and high optical contrast (~ 30 %) between amorphous and crystalline structure. A common way to switch thin GST films from an amorphous to a crystalline state is laser radiation. However, reversible switching of elements with a large size of the GST functional area can only be achieved in the surface scanning mode with a pulsed laser beam, which significantly increases switching time. In this work, the design of the functional micro-sized GST region switching a thin-film resistive heating element is presented. It has been established that crystallization of 100×100 µm 30 nm GST functional area into fcc structure occurs when single 200 ms long electric impulse with amplitude 2.1 V (~ 310 mA), or at 1.7 V and ~ 220 mA current in DC measuring mode, flows through heating element. According to implemented computer simulation, the GST area at this electrical action heats up to ~ 218 °C. The results obtained demonstrate the possibility to use the developed and fabricated structure for creation of elements of non-volatile active optical and opto-electronic devices, including information display devices.

Key words: thin films GST, phase change materials, electrical switching, metal resistive heater, Joule heating, electrical heating
Published in: ELECTRONICS MATERIALS
Bibliography link: Glukhenkaya V. B., Pestov G. N., Gulidova A. I., Saurov M. A., Smirnov P. A., Fedyanina M. E., Kozlov A. O., Savitskiy A. I. Crystallization of Ge2Sb2Te5 thin films using a thin-film resistive heating element to create optoelectronic and integrated optical elements and devices based on them. Proc. Univ. Electronics, 2024, vol. 29, no. 3, pp. 267–280. https://doi.org/10.24151/1561-5405-2024-29-3-267- 280
Financial source: The work has been supported by the Russian Science Foundation (project no. 23-79-10309) in the “Materials and devices laboratory of active photonics” MIET. Acknowledgements: the authors express their gratitude to A. A. Sherchenkov, P. I. Lazarenko and D. Yu. Terekhov for their assistance in conducting experiments.

Victoria B. Glukhenkaya
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Grigory N. Pestov
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1); SMC “Technological Centre” (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1, bld. 7)

Alla I. Gulidova
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Mikhail A. Saurov
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1); SMC “Technological Centre” (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1, bld. 7)

Peter A. Smirnov
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1); Р. N. Lebedev Physical Institute of the Russian Academy of Sciences (Russia, 119991, Moscow, Leninsky ave., 53)

Mariya E. Fedyanina
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Aleksander O. Kozlov
SMC “Technological Centre” (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1, bld. 7)

Andrey I. Savitskiy
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1); SMC “Technological Centre” (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1, bld. 7)

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Publication type: Scientific article
DOI: 10.24151/1561-5405-2024-29-3-267-280
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