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The problem of increasing the performance of semiconductor integrated circuits of digital devices is solved by circuit engineering and structural and technological methods. Circuit engineering methods include forcing the dynamic mode with the help of corrective circuits, the use of locking and shunt diodes, nonlinear feedback and current switches. Constructive and technological methods include miniaturization of active and passive components on a chip, reduction of parasitic capacitances, operation in modes with high values of the base and collector current densities or drain current, reduction of voltage differences between low and high levels in signals. An increase in performance is also possible due to the application of the optoelectronics principles. In this work, the results of investigation of the operation of a transistor-transistor logic (TTL) integrated circuit when exposed to unmodulated radiation generated by a red laser are presented. The static and dynamic characteristics of the chip were measured at different exposure intensities. It was demonstrated that the change in characteristics under optical influence is due to an increase in the lifetime of nonequilibrium charge carriers and the photovoltaic effect in p - n junctions. A SPICE model of a complex TTL type inverter considering these physical effects has been developed. The results of circuit simulation qualitatively reproduce the experimental results obtained. The conducted research can be applied to create high-speed integrated circuits on bipolar transistors of a fundamentally new type.
Sergo Sh. Rekhviashvili
Institute of Applied Mathematics and Automation of the Kabardino-Balkar Scientific Center of the Russian Academy of Sciences (Russia, 360000, Kabardino-Balkarian Republic, Nalchik, Shortanov st., 89A)
Dakhir S. Gaev
Kabardino-Balkarian State University named after H. M. Berbekov (Russia, 360004, Kabardino-Balkarian Republic, Nalchik, Chernyshevsky st., 173)

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