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A promising approach for increasing the thermoelectric figure of merit ZT is the development of nanostructured thermoelectric (TE) materials including those on the basis of lead telluride PbTe and germanium telluride GeTe. Nanopatterning technology optimization requires knowledge of heat- and electrotransfer mechanisms in TE materials that depend on concentration and mobility of charge carriers. In this work, nanostructured middle-temperature TE materials on the basis of n -type PbTe and p -type GeTe were prepared using the developed technology including synthesis by direct alloying of components, grinding of synthesized PbTe and GeTe in a planetary ball mill to nanopowders, and their consolidation into a bulk material by spark plasma sintering. For electrophysical measurements the ohmic contacts on the samples of TE materials were formed by electrochemical deposition of nickel. The temperature dependences of the thermoelectric parameters for nanostructured TE materials were investigated. The van der Pauw method was used for the measurements of the concentration and mobility of majority carriers. It has been established that the values of concentrations of the majority charge carriers for the TE materials obtained by hot pressing and spark plasma sintering are in the range from 1019 to 1020 cm-3, which is optimal for TE materials. It was found that the mobility of the majority charge carriers for PbTe is significantly higher than for GeTe. At the same time, the mobility of the majority charge carriers in nanostructured PbTe has decreased by 36 % in comparison with PbTe obtained by hot pressing. However, this has not led to appreciable decrease in electrical conductivity, which is due to the increase in concentration of the majority charge career. As a result, the maximum obtained values of ZT for nanostructured PbTe and GeTe are respectively 14 and 13 % higher than for TE materials prepared by hot pressing.

Key words: thermoelectricity, thermoelectric generator, TEG, nanostructured thermoelectric materials, thermoelectric parameters, Van der Pauw method, electrical conductivity, Hall constant, carriers concentration, carriers mobility
Published in: ELECTRONICS MATERIALS
Bibliography link: Pepelyaev D. V., Korchagin E. P., Shtern M. Yu., Rogachev M. S., Terekhov D. Yu., Bursin S. B., Shtern Yu. I., Sherchenkov A. A. Investigation of the concentration and mobility of charge carriers in nanostructured thermoelectric materials on the basis of PbTe and GeTe. Proc. Univ. Electronics, 2024, vol. 29, no. 2, pp. 147–157. https://doi.org/10.24151/1561-5405-2024-29-2-147-157
Financial source: The work has been supported by the Russian Science Foundation (project no. 20-19-00494 – synthesis of materials, project no. 21-19-00312 – formation of samples and their characterization).

Dmitry V. Pepelyaev
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Egor P. Korchagin
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Maxim Yu. Shtern
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Maxim S. Rogachev
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Dmitry Yu. Terekhov
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Sergey B. Burzin
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Yuri I. Shtern
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

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UDK: 537.323
Publication type: Scientific article
DOI: 10.24151/1561-5405-2024-29-2-147-157
RISC id: SERUSN

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