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A promising method for increasing the efficiency of thermoelectric (TE) energy converters as alternate energy sources is the nanostructuring of TE materials used for fabrication of TE elements. Wide spreading of TE devices is hampered by their low efficiency that is defined by thermoelectric figure of merit ZT of TE elements. In this work, the stability of the properties of low-temperature nanostructured TE materials based on solid solutions of n-type Bi2Te2.8Se0.2 (0.16 wt. % CdCl2) and p-type Bi0.5Sb1.5Te3 (2.2 wt. % Te and 0.16 wt. % TeI4), obtained by grinding the synthesized materials in a planetary ball mill and subsequent compaction by spark plasma sintering. TE materials Bi2Te2.8Se0.2 and Bi0.5Sb1.5Te3 have high maximum ZT values of 1.17 and 1.23, respectively. The thermal stability of Bi2Te2.8Se0.2 and Bi0.5Sb1.5Te3 materials properties was studied using multiple measurements by differential scanning calorimetry and thermogravimetry. Thermoelectric and electrophysical characteristics of TE materials at temperatures up to 500 K were obtained. It has been established that nanostructuring has no significant effect on the thermal stability of the low-temperature nanostructured TE materials under study.

Key words: thermoelectricity, thermal properties, stability, thermoelectric generator, TEG
Published in: ELECTRONICS MATERIALS
Bibliography link: Shtern M. Yu., Sherchenkov A. A., Shtern Yu. I., Babich A. V., Rogachev M. S., Babich T. A., Maronchuk I. I. Investigation of the property stability for low-temperature nanostructured thermoelectric materials based on BiTeSe and BiSbTe. Izv.vuzov. Elektronika = Proc. Univ. Electronics. 2025;30(2):140–148. (In Russ.). https://doi.org/10.24151/1561-5405-2025-30-2-140-148.
Financial source: the work has been supported by the Ministry of Science and Higher Education of the Russian Federation under the state assignment (Agreement FSMR-2023-0014).

Maxim Yu. Shtern
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Alexey A. Sherchenkov
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Yuri I. Shtern
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Alexey V. Babich
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Maxim S. Rogachev
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Tatyana A. Babich
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Igor I. Maronchuk
JSC “Optron” (Russia, 105187, Moscow, Shcherbakovskaya st., 53)

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Information about the publication

UDK: 537.323
Publication type: Scientific article
Source lang: Russian
DOI: 10.24151/1561-5405-2025-30-2-140-148
RISC id: DAVIGM

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