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Linear low-dropout (LDO) voltage regulators are intended for supplying power to the power quality demanding functional regions of VLSI. Classic capacitive regulators rely on larger nominal capacitance compensation and, for this reason, use additional integrated circuit package external IO pins. In this work, a circuit of capacitorless LDO regulator (CLDO) for VLSI power networks with regional intra-crystal regulators, performed on the basis of the Miller reverse compensation method, which does not require excessive external pins, is considered. The developed block has a small internal compensation capacity from 10 pF. It has been demonstrated that CLDO circuit is capable of operating at a lowered voltage from 2.7 V for connecting external regulators. The block topology project occupies ~ 0.082 mm2, contains an integrated current source and is a ready-made integrated solution. The level of power supply ripples suppression is more than 42 dB in the frequency range 1–100 kHz.

Key words: microelectronics, capacitorless voltage regulator, CLDO, power supply networks, VLSI
Published in: CIRCUIT ENGINEERING AND DESIGN
Bibliography link: Volobuev P. S., Korshunov A. V. Capacitorless voltage regulator for ICs distributed power supply networks. Izv. vuzov. Elektronika = Proc. Univ. Electronics. 2025;30(6):721–730. (In Russ.). https://doi.org/10.24151/1561-5405-2025-30-6-721-730.
Financial source: the work has been supported by the Russian Science Foundation (project no. 23-29-00518, https://rscf.ru/en/project/23-29-00518/) and carried out using the equipment and with the assistance of specialists from Resource Sharing Center “Functional Control and Diagnostics of Micro- and Nanosystem Technology” on the basis of the SMC “Technological Centre”.

Pavel S. Volobuev
SMC “Technological Centre”, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1, bld. 7; National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

Andrey V. Korshunov
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

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Information about the publication

UDK: 621.3.049.774
Publication type: Scientific article
Source lang: Russian
DOI: doi.org/10.24151/1561-5405-2025-30-6-721-730
RISC id: HBZADP

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