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A substantial amount of temperature field gradient that occurs in composite materials near the interfaces of homogeneous components with significantly different thermal conductivity characteristics can lead to a deterioration in the performance of materials. In this regard, it is relevant to predict local temperature fields at the boundaries between components in the composite. In this work, the problem of calculating the temperature field strength on the inclusion interface in the matrix composite from the side of matrix is considered. In the generalized singular approximation, expressions are obtained for the operator of the concentration of the temperature field strength on the surface of anisotropic inclusions in the form of strongly oblate ellipsoids in the matrix composite depending on the position of the point on the inclusion surface, on the volume fraction of inclusions in the material, on the orientation of the inclusion in relation to the direction of applied temperature field strength. This operator relates the fields on the inclusion surface on the matrix side to the average value of the temperature field strength in the composite sample. Based on the obtained expressions, model calculations were carried out for a composite with a polymer matrix made of ED-20 and inclusions made of multilayer graphene. The absolute values of the temperature field strength at the points on the edges of the inclusions on the matrix side were calculated at a fixed strength of the applied temperature field at different aspect ratios of ellipsoids modeling the shape of graphene inclusions, as well as at different angles describing the mutual orientation of the inclusion and the intensity vector of the applied field. It has been demonstrated that in the case of graphene multilayer inclusions, at points on their sharp edges the field strength from the side of the polymer matrix can exceed the applied field strength by several orders of magnitude.
Igor V. Lavrov
National Research University of Electronic Technology, Moscow, Russia; Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, Moscow, Russia
Vladimir V. Bardushkin
National Research University of Electronic Technology, Moscow, Russia; Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, Moscow, Russia
Ekaterina S. Migunova
National Research University of Electronic Technology, Moscow, Russia

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