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In a multichip LED system, various thermoelectric feedback mechanisms are acting that lead to inhomogeneous temperature pattern in the construction. This causes the LEDs forming LED matrix to heat up to critical values of temperatures and thermomechanical stresses leading to accelerated device degradation and to shortening of its designed no-failure lifetime. In this work, a thermoelectric model of an LED matrix consisting of n parallel-connected chains containing m series-connected LED chips placed on a mounting plate is presented. The redistribution of the total matrix current between the chains as a result of LED matrix self-heating is accounted for. Mathematical description of thermoelectric model consists of a thermal conductivity equation with appropriate boundary conditions and an expression for the temperature dependence of the strength of currents flowing through chains of series-connected LEDs. The temperature pattern in LED matrix design was found using a specially developed program that includes iterative access to the COMSOL Multiphysics software environment, with that the convergence of the applied calculation algorithm was studied. It was shown that the redistribution of current between series-connected LED chains leads to a significant increase in the inhomogeneity of the temperature distribution over LED matrix surface. The dependence of the coefficient of inhomogeneity of temperature distribution on the upper surface of LED matrix on the current strength has been obtained. Experimental verification of the model was carried out.

Key words: LED matrix, thermoelectric model, temperature pattern, thermal parameters, power density
Published in: Integral electronics elements
Bibliography link: Khodakov A. M., Sergeev V. A., Frolov I. V., Radaev О. А., Zaitsev S. A. Simulation and research of thermoelectric processes in LED matrixes. Proc. Univ. Electronics, 2024, vol. 29, no. 6, pp. 752–762. https://doi.org/10.24151/1561-5405-2024-29-6-752-762. – EDN: FRVEYO.
Financial source: the work was carried out within the framework of the state task of the Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences (no. FFWZ-2022-0002).

Alexander M. Khodakov
Ulyanovsk Branch of the Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Russia, 432011, Ulyanovsk, Goncharov st., 48/2

Vyacheslav A. Sergeev
Ulyanovsk Branch of the Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Russia, 432011, Ulyanovsk, Goncharov st., 48/2; Ulyanovsk State Technical University, Russia, 432027, Ulyanovsk, Severny Venets st., 32

Ilya V. Frolov
Ulyanovsk Branch of the Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Russia, 432011, Ulyanovsk, Goncharov st., 48/2

Oleg A. Radaev
Ulyanovsk Branch of the Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Russia, 432011, Ulyanovsk, Goncharov st., 48/2

Sergey A. Zaitsev
Ulyanovsk Instrument Engineering Design Bureau JSC, Russia, 432001, Ulyanovsk, Krymov st., 10a

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UDK: 681.518.3
Publication type: Scientific article
Source lang: Russian
DOI: 10.24151/1561-5405-2024-29-6-752-762
RISC id: FRVEYO

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