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Upon creation of precision temperature control systems it is necessary to consider many factors affecting the functional and operational characteristics of thermoelectric systems. In this work, the created metrological assurance for studying and monitoring the parameters of thermoelectric materials, structures and devices at all stages of the development and production of thermoelectric systems is considered. The developed and obtained effective nanostructured materials on the basis of BiTeSe and BiSbTe with dimensionless thermoelectric figure of merit of 1.16 and 1.24, respectively, are presented. Complex studies of these materials were carried out, the mechanisms of electrical and thermal conductivity were determined, and the relationship between their structure and parameters was established. The technology of metal-dielectric commutation matrices based on oxidized aluminum alloys for thermoelectric modules was developed. The kinetics of growth of porous anodic oxide films on aluminum alloys was determined. Connection formation techniques and employed contact materials in thermoelectric modules are substantiated, the specific contact resistance of which is 10–9 Ohm·m2 and the adhesion strength is up to 19 MPa. A technology for sealing thermoelectric modules with increased reliability and mechanical strength was developed. Design criteria were determined and justified, based on which the power supplies for thermoelectric systems were manufactured, having low pulsation level (0.3 %) and high efficiency (93 %). To calculate temperature in electronic thermometers mathematical models allowing the temperature determination within the accuracy of 5·10–3 K have been developed and justified. The presented high-precision electronic temperature measuring instruments, as well as precision thermoelectric thermostats, calibrators, heat and cold chambers have operating temperatures ranging from –50 to +60 °C.
Yuri I. Shtern
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1
Maxim Yu. Shtern
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1
Maxim S. Rogachev
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1
Yacov S. Kozhevnikov
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

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