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In order to solve the microminiaturization problems and to increase capacity of devices based on AlGaN/GaN heterostructures, it is necessary to produce monolithic circuits containing digital and analog parts manufactured on a single chip. The most promising method of a normally-off GaN transistor formation is to use a p-GaN gate. In this work, simulation results of normally-off n- and p-channel transistors based on GaN structure with p-GaN epitaxial layer are presented. Physical analog of normally-off transistor with p gate was calibrated as required by experiment. It has been established that current-voltage characteristics of simulated transistors differ from current-voltage characteristics of prototype hardware by no more than 20 %. The p-channel transistor design has been chosen considering that threshold voltages of the n- and p-channel transistors for a complementary pair should coincide in modulus –1 V. The possibility is shown to form a complementary pair for monolithic ICs based on the considered heterostructure with switching value 2.7 V.

Key words: normally-off transistor, GaN, complementary pair, TCAD simulation, monolithic integrated circuit
Published in: Integral electronics elements
Bibliography link: Egorkin V. I., Chukanova O. B. Normally-off GaN p-channel transistor for complementary pair. Proc. Univ. Electronics, 2024, vol. 29, no. 5, pp. 616–624. https://doi.org/10.24151/1561-5405-2024-29-5-616-624. – EDN: APTQXV

Vladimir I. Egorkin
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

Olga B. Chukanova
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

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Information about the publication

UDK: 621.382.323
Publication type: Scientific article
Source lang: Russian
DOI: 10.24151/1561-5405-2024-29-5-616-624
RISC id: APTQXV

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