The methods for calculation of the design-technological parameters of LDMOS transistor to obtain a consistent pair of the breakdown voltage (Vbd) values and the device resistance in the open state Ron have been presented.
The possibility and necessity of the theory of electrical contacts application while considering the electrical conductivity in macroscopic structures have been shown. As a component of the resistive film electrical resistance an introduction of the ...
It has been proposed as an algorithmic basis for the control systems to use the methods for random search of solutions, which provide to bring down the response time of the system service.