Приведены сведения о дефектах, существующих в слитках и эпитаксиальных слоях карбида кремния. Рассмотрены микропоры, малоугловые границы и дефекты упаковки.
Авров Дмитрий Дмитриевич
Санкт-Петербургский государственный электротехнический университет «ЛЭТИ» им. В.И. Ульянова (Ленина)
Лебедев Андрей Олегович
Санкт-Петербургский государственный электротехнический университет «ЛЭТИ» им. В.И. Ульянова (Ленина); Физико-технический институт им. А.Ф.Иоффе РАН (г. Санкт-Петербург)
Таиров Юрий Михайлович
Санкт-Петербургский государственный электротехнический университет «ЛЭТИ» им. В.И.Ульянова (Ленина)
1. Авров Д.Д., Лебедев А.О., Таиров Ю.М. Основные дефекты в слитках и эпитакси-альных слоях карбида кремния. I. Дислокационная структура и морфологические дефек-ты. Обзор // Изв. вузов. Электроника. - 2015. - Том 20. - № 3. - С. 225-238.
2. Heindl J., Strunk H.P., Heydemann V.D., Pensl G. Micropipes: hollow tubes in silicon carbide // Physica Status Solidi A. - 1997. - Vol. 162. - Iss. 1. - Р. 251-262.
3. The mechanism of micropipe nucleation at inclusions in silicon carbide / M. Dudley, X.R. Huang, W. Huang et al. // Appl. Phys. Lett. - 1999. - Vol. 75. - Iss.6. - Р. 784-786.
4. Growth of SiC substrates / A. Powell, J. Jenny, S. Muller et al. // Intern. J. of High Speed Electronics and Systems. - 2006. - Vol. 16. - N.3 - Р. 751-778.
5. Stein R.A. Formation of macrodefects in SiC // Physica B: Condensed Matter. - 1993. - Vol. 185. - Iss.1-4. - Р. 211-216.
6. Frank F.C. Capillary equilibria of dislocated crystals // Acta Crystallogr. - 1951. -Vol. 4. - Iss.6. - Р. 497-501.
7. Friedel J. Dislocations. - Oxford: Pergamon Press, 1964. - 644 p.
8. Vetter W.M., Dudley M. Micropipes and the closure of axial screw dislocation cores in silicon carbide crystals // J. Appl. Phys. - 2004. - Vol. 96. - Iss.1. - Р. 348-353.
9. Golightly J.P. Hollow screw dislocation cores in silicon carbide // Z. Kristallogr. - 1969. - Vol. 130. - Iss.1-6. - Р. 310-313.
10. Sunagawa I., Bennema P. Observations of the influence of stress fields on the shape of growth and dissolution spirals // J. Cryst. Growth. - 1981. - Vol. 53. - Iss. 3. - Р.490-504.
11. Tanaka H., Uemura Y., Inomata J. Observations of holes around dislocation core in SiC crystal // J. Cryst. Growth. - 1981. - Vol. 53. - Iss. 3. - Р. 630-632.
12. Van der Hoek B., Van der Eerden J.P., Bennema P. Some methods for the quantitative estimation of crystal growth parameters from observed step patterns // J. Cryst. Growth. 1982. Vol. 56. Iss. 1. Р. 108124.
13. Krishna P., Jiang S.-S., Lang A.R. An optical and X-ray topographic study of giant screw dislocations in silicon carbide // J. Cryst. Growth. 1985. Vol. 71. Iss.1. Р. 4156.
14. The relationship between micropipes and screw dislocations in PVT grown 6H-SiC / J. Giocondi, G.S. Rohrer, M. Skowronski et al. // MRS Symposium Proceedings. 1996. Vol. 423. Р. 539. doi:10.1557/PROC-423-539.
15. Quantitative analysis of screw dislocations in 6H−SiC single crystals / M. Dudley, W. Si, S. Wang et al. // Nuovo Cimento Soc. Ital. Fis. D. 1997. Vol. 19. Iss. 24. Р. 153164.
16. Formation of micropipes in SiC under kinetic aspects / J. Heindl, W. Dorsch, R. Eckstein et al. // J. Cryst. Growth. 1997. Vol. 179. Iss. 34. Р. 510514.
17. Van der Hoek B., Van der Eerden J.P., Bennema P. Thermodynamical stability condi-tions for the occurrence of hollow cores caused by stress of line and planar defects // J. Cryst. Growth. 1982. Vol. 56. Iss. 3. Р. 621632.
18. Srolovitz D.J., Safran S.A. Capillary equilibria of surfaces intersected by dislocations // Philosophical Magazine A. 1985. Vol. 52. Iss. 6. Р. 793800.
19. Dislocations as a source of micropipe development in the growth of silicon carbide / D.I. Cherednichenko, Y.I. Khlebnikov, I.I. Khlebnikov et al. // J. Appl. Phys. 2001. Vol. 89. Iss. 7. Р. 41394141.
20. Ma X. Superscrew dislocations in silicon carbide: dissociation, aggregation, and for-mation // J.Appl.Phys. 2006. Vol. 99. Iss.6. 063513. 6 p.
21. X-ray «magnifying» imaging investigation of giant Burgers vector micropipe-dislocations in 4H-SiC / J. Hartwig, J. Baruchel, H. Kuhn et al. // Nuclear Instr. and Methods in Physics Research B. 2003. Vol. 200. Р. 323328.
22. Pirouz P. On micropipes and nanopipes in SiC and GaN // Philosophical Magazine A. 1998. Vol. 78. Iss. 3. Р. 727736.
23. Mahajan S. Origins of micropipes in SiC crystals // Appl. Phys. Lett. 2002. Vol. 80. Iss. 23. Р. 43214323.
24. Ma X. A method to determine superscrew dislocation structure in silicon carbide // Ma-ter. Sci. Engineer. B. 2006. Vol. 129. Iss. 13. Р. 216221.
25. Structural macro-defects in 6H-SiC wafers / R.C. Glass, L.O. Kjellberg, V.F. Tsvetkov at al. // J. Cryst. Growth. 1993. Vol. 132. Iss. 34. Р. 504512.
26. Origin of domain structure in hexagonal silicon carbide boules grown by the physical vapor transport method / S. Ha, N.T. Nuhfer, G.S. Rohrer et al. // J. Cryst. Growth. 2000. Vol. 220. Iss. 3. Р. 308315.
27. Evolution and structure of low-angle grain boundaries in 6H–SiC single crystals grown by sublimation method / Y. Gao, X. Hu, X. Chen et al. / J. Cryst. Growth. 2010. Vol. 312. Iss. 20. Р. 29092913.
28. Behavior of basal plane dislocations and low angle grain boundary formation in hexago-nal silicon carbide / Y. Chen, G. Dhanaraj, W. Vetter et al. // Mater.Sci.Forum. 2007. Vol. 556557. Р. 231234.
29. Structural properties of subgrain boundaries in bulk SiC crystals / M. Katsuno, N. Ohtani, T. Aigo et al. // J. Cryst. Growth. 2000. Vol. 216. Iss. 14. Р. 256262.
30. Schmitt E., Straubinger T., Rasp M., Weber A.-D. Defect reduction in sublimation grown SiC bulk crystals // Superlattices and Microstructures. 2006. Vol. 40. Iss. 46. Р. 320327.
31. Takahashi J., Ohtani N., Katsuno M., Shinoyama S. Sublimation growth of 6H- and 4H-SiC single crystals in the and directions // J. Cryst. Growth. 1997. Vol. 181. Iss. 3. Р. 229240.
32. Feng G., Suda J., Kimoto T. Characterization of stacking faults in 4H-SiC epilayers by room-temperature microphotoluminescence mapping // Appl. Phys. Lett. 2008. Vol. 92. Iss. 22. 221906. 3 p.
33. Feng G., Suda J., Kimoto T. Characterization of major in-grown stacking faults in 4H-SiC epilayers // Physica B: Condensed Matter. 2009. Vol. 404. Iss. 2324. Р. 47454748.
34. Cathodoluminescence study of the properties of stacking faults in 4H-SiC homoepitaxial layers / S. Maximenko, J.A. Freitas, Jr., P.B. Klein et al. // Appl. Phys. Lett. 2009. Vol. 94. Iss. 9. 092101. 3 p.
35. Izumi S., Tsuchida H., Kamata I., Tawara T. Structural analysis and reduction of in-grown stacking faults in 4H–SiC epilayers // Appl. Phys. Lett. 2005. Vol. 86. Iss. 20. 202108. 3 p.
36. Tsuchida H., Kamata I., Nagano M. Formation of basal plane Frank-type faults in 4H-SiC epitaxial growth // J. Cryst. Growth. 2008. Vol. 310. Iss. 4. Р. 757765.
37. H.Fujiwara, T.Kimoto, T.Tojo, H.Matsunami Characterization of in-grown stacking faults in 4H–SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes // Appl. Phys. Lett. 2005. Vol. 87. Iss. 5. 051912. 3 p.
38. Song H.K., Moon J.H., Kim H.J., Mehregany M. Observation of stacking faults formed during homoepitaxial growth of p-type 4H-SiC // Appl. Phys. Lett. 2009. Vol. 94. Iss. 11. 112109. 3 p.
39. Structural and electronic characterization of (2,33) bar-shaped stacking fault in 4H-SiC epitaxial layers / M. Camarda, A. Canino, A.La Magna et al. // Appl. Phys. Lett. 2011. Vol. 98. Iss. 5. 051915. 3 p.
40. Fadeev A.Yu., Lebedev A.O., Tairov Yu.M. Growth of 4H silicon carbide crystals on a (11-22) seed // Semiconductors. 2012. Vol. 46. Iss. 10. Р. 13461349.
41. Galeckas A., Linnros J., Pirouz P. Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias // Appl. Phys. Lett. 2002. Vol. 81. Iss. 5. Р. 883886.
42. Skowronski M., Ha S. Degradation of hexagonal silicon-carbide-based bipolar devices // J. Appl. Physics. 2006. Vol. 99. Iss. 1. 011101. 24 p.
43. Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions / J.Q. Liu, M. Skowronski, C. Hallin et al. // Appl. Phys. Lett. 2002. Vol. 80. Iss. 5. Р. 749751.
44. Structural instability of 4H–SiC polytype induced by n-type doping / J.Q. Liu, H.J. Chung, T. Kuhr et al. // Appl. Phys. Lett. 2002. Vol. 80. Iss. 12. Р. 21112113.
45. Liu K.X., Stahlbush R.E., Maximenko S.I., Caldwell J.D. Differences in emission spec-tra of Si- and C-core partial dislocations // Appl. Phys. Lett. 2007. Vol. 90. Iss. 15. 153503. 3 p.
46. Ha S., Benamara M., Skowronski M., Lendenmann H. Core structure and properties of partial dislocations in silicon carbide p-i-n diodes // Appl. Phys. Lett. 2003. Vol. 83. Iss. 24. Р. 49574959.
47. Long term operation of 4.5kV PiN and 2.5kV JBS diodes / H. Lendenmann, F. Dahlquist, N. Johansson et al. // Mater.Sci.Forum. 2001. Vol. 353356. Р. 727730.
48. Maximenko S.I., Pirouz P., Sudarshan T.S. Investigation of the electrical activity of partial dislocations in SiC p-i-n diodes // Appl. Phys. Lett. 2005. Vol. 87. Iss. 3. 033503. 3 p.
49. Nitrogen doping and multiplicity of stacking faults in SiC / P. Pirouz, M. Zhang, H. McD. Hobgood et al. // Philosophical Magazine. 2006. Vol. 86. Iss. 2931. Р. 46854697.
50. Lambrecht W.R.L., Miao M.S. Electronic driving force for stacking fault expansion in 4H‐SiC // Phys.Rev. B. 2006. Vol. 73. Iss. 15. 155312. 6 p.
51. Study of Shockley partial dislocation mobility in highly N-doped 4H-SiC by cantilever bending / H. Idrissi, G. Regula, M. Lancin et al. // Physica Status Solidi (c). 2005. Vol. 2. Iss. 6. Р. 19982003.