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    <journal-meta>
      <journal-id journal-id-type="issn">1561-5405</journal-id>
	    <journal-id journal-id-type="doi">10.24151/1561-5405</journal-id>	  
      <journal-id journal-id-type="publisher-id">Proceedings of Universities. Electronics</journal-id>
      <journal-title-group>
        <journal-title xml:lang="en">Scientifical and technical journal "Proceedings of Universities. Electronics"</journal-title>
        <trans-title-group xml:lang="ru">
          <trans-title>Научно-технический журнал «Известия высших учебных заведений. Электроника»</trans-title>
        </trans-title-group>        
      </journal-title-group>      
      <issn publication-format="print">1561-5405</issn>
      <issn publication-format="online">2587-9960</issn>
      <publisher>
        <publisher-name xml:lang="en">National Research University of Electronic Technology</publisher-name>
        <publisher-name xml:lang="ru">Национальный исследовательский университет "Московский институт электронной техники"</publisher-name>
      </publisher>
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    <article-id pub-id-type="udk">621.793:[539.23:539.216.1]</article-id><article-categories><subj-group><subject>Технология микро- и наноэлектроники</subject></subj-group></article-categories><title-group><article-title xml:lang="en">Atomic Layer Deposition: Reactors and Layer Applications</article-title><trans-title-group xml:lang="ru"><trans-title>Атомно-слоевое осаждение: реакторы и применение</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author"><string-name xml:lang="ru">Кузнецов Владимир Иванович</string-name><name-alternatives><name xml:lang="ru"><surname>Кузнецов</surname><given-names>Владимир Иванович</given-names></name><name xml:lang="en"><surname>I</surname><given-names>Kuznetsov V</given-names></name></name-alternatives><string-name xml:lang="en">Kuznetsov V I</string-name><xref ref-type="aff" rid="AFF-1"/></contrib><aff id="AFF-1" xml:lang="ru">Компания «Levitech» (Алмере, Нидерланды)</aff></contrib-group><fpage>365</fpage><lpage>376</lpage><self-uri>http://ivuz-e.ru/issues/4-_2015/atomno_sloevoe_osazhdenie_reaktory_i_primenenie/</self-uri><self-uri content-type="pdf">http://ivuz-e.ru/download/4_2015_1908.pdf</self-uri><abstract xml:lang="en"><p>Atomic Layer Deposition has emerged as a powerful, and frequently preferred, deposition technology. The interest in ALD has increased considerably in the last decade due to exceptional properties of ALD. ALD can be employed for the most demanding applications due to its superior conformality, large area uniformity and atomic level accuracy in controlling film thickness and composition. An important challenge for the industrial application of ALD is the reactor that needs to be designed to allow for the fast and cost-effective growth of films. This paper gives a short review of ALD principals, the types of ALD that can be performed, reactor designs and the main areas of ALD layer applications.</p></abstract><trans-abstract xml:lang="ru"><p>Рассмотрены принципы и типы атомно-слоевого осаждения &amp;#40;АСО&amp;#41;. Показано, что ACО востребовано благодаря своей точности на атомном уровне для контроля толщины и состава пленки. Представлены конструкции реакторов для быстрого и не требующего больших материальных затрат роста пленок.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>атомно-слоевое осаждение</kwd><kwd>реакторы</kwd><kwd>поверхностное реакции</kwd><kwd>равномерные тонкие пленки</kwd></kwd-group><funding-group/></article-meta>
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