Методика проектирования GaAs-pHEMT дискретного 6-разрядного аттенюатора с низким паразитным фазовым сдвигом X-диапазона частот

1.    Mailloux R. J. Phased Array Antenna Handbook. 3rd ed. Norwood, MA: Artech House; 2017. 515 p.

2.    Skolnik M. I. Introduction to Radar Systems. 3rd ed. New York: McGraw-Hill; 2000. 784 p.

3.    Matthews P. Making fully digital beamforming for radar and electronic warfare applications a reality. Mobility Engineering. 01.06.2021. Available at: https://www.mobilityengineeringtech.com/component/content/article/39312-making-fully-digital-beamfor... (accessed: 27.04.2026).

4.    The future is here: Integrating X-band radar for next-level detection and imaging. Qorvo. 08.02.2024. Available at: https://www.qorvo.com/design-hub/blog/the-future-is-here-integrating-x-band-radar-for-next-level-det... (accessed: 08.06.2025).

5.    Kuzuhara M., Tanaka S. GaAs-based high-frequency and high-speed devices. Oyo Buturi. 2002;71(3):295–301. https://doi.org/10.11470/oubutsu1932.71.295

6.    Matthews P. RF components for radar: Overview and trends. Knowles Precision Devices Blog. 17.01.2024. Available at: https://blog.knowlescapacitors.com/blog/rf-components-for-radar-overview-and-trends (accessed: 27.04.2026).

7.    Кулиш А. М., Лосев В. В. Проектирование малошумящего усилителя с байпас-каналом X-диапазона частот с использованием библиотеки элементов технологического процесса 0,5 мкм GaAs pHEMT. Изв. вузов. Электроника. 2025;30(1):64–75. https://doi.org/10.24151/1561-5405-2025-30-1-64-75. EDN: BCBBCN.

Kulish A. M., Losev V. V. The design of the X-band low-noise amplifier with bypass option using 0.5 um GaAs pHEMT process design kit. Izv. vuzov. Elektronika = Proc. Univ. Electronics. 2025;30(1):64–75. (In Russ.). https://doi.org/10.24151/1561-5405-2025-30-1-64-75

8.    Кочемасов В., Белов Л. Аттенюаторы с электронным управлением – производители и характеристики. Электроника: НТБ. 2017;(4):82–95. https://doi.org/10.22184/1992-4178.2017.164.4.82.95. EDN: YPBFYZ.

Kochemasov V., Belov L. Electronically controlled attenuators: Manufacturers and characteristics. Elektronika: NTB = Electronics: STB. 2017;(4):82–95. (In Russ.). https://doi.org/10.22184/1992-4178.2017.164.4.82.95

9.    Ku B.-H., Hong S. 6-bit CMOS digital attenuators with low phase variations for X-band phased-array systems. IEEE Trans. Microwave Theory Tech. 2010;58(7):1651–1663. https://doi.org/10.1109/TMTT.2010.2049691

10. Li J., Yuan Y., Zhang Y., Li C., Yu W., Yu Z. An X-band 6-bit high-accuracy GaAs digital attenuator with low insertion phase shift. In: 2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT). Qingdao: IEEE; 2023, pp. 1–3. https://doi.org/10.1109/ICMMT58241.2023.10276565

11. Wang K., Wang Z., Wang G., Chen H., Zheng Q., Yu F. Design of low-insertion-phase-shift MMIC attenuator integrated with a serial-to-parallel converter. IEICE Electronics Express. 2017;14(20):20170924. https://doi.org/10.1587/elex.14.20170924

12. Hao D., Zhang W., Liu X., Liu Y. A wideband 6-bit digital attenuator in a GaAs pHEMT MMIC. Electronics. 2022;11(14):2166. https://doi.org/10.3390/electronics11142166

13. Gianini F., Limiti E., Longhi P. E., Serino A. X-band multifunction GaAs MMIC for T/R modules in smart antenna applications. Microwave Opt. Technol. Lett. 2008;50(6):1667–1673. https://doi.org/10.1002/mop.23443

14. Dai Y.-S., Li P., Han Q.-F., Chen S.-B., Chen X., Wang L.-J. et al. Research on a novel 2~18 GHz PHEMT MMIC digital attenuator with low insertion phase shift. In: 2012 International Conference on Microwave and Millimeter Wave Technology (ICMMT). Shenzhen: IEEE; 2012, vol. 4, pp. 1–4. https://doi.org/10.1109/ICMMT.2012.6230309

15. Bahl I. J. Control Components Using Si, GaAs, and GaN Technologies. London: Artech House; 2014. 310 p.

16. Liu C., Xu X., He Z. X-band 5-bit MMIC digital attenuator with low phase shift. Indonesian Journal of Electrical Engineering and Computer Science (IJEECS). 2014;12(6):4184–4189.

17. Yang Y., Jiaxuan L., Jialong Z., Xie C., Tan C., Yu Z. An X-band 6-bit MMIC digital controlled attenuator with low insertion phase shift. In: 2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT). Harbin: IEEE; 2022, pp. 1–3. https://doi.org/10.1109/ICMMT55580.2022.10023122

18. Akmal R., Cheema H. M., Kashif M., Arif M. S., Zeeshan M. A fully integrated X-band multifunction core chip in 0.25 μm GaN HEMT technology. In: 2020 International Conference on Radar, Antenna, Microwave, Electronics, and Telecommunications (ICRAMET). Tangerang: IEEE; 2020, pp. 308–313. https://doi.org/10.1109/ICRAMET51080.2020.9298599