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Structures based on suspended graphene are promising elements for problems in photonics and sensory electronics due to the elimination of trap states in the substrate and an increase in the speed and sensitivity of the graphene layer. The development of carbon nanostructure based groups of techniques’ incorporation into silicon based technologies of micro- and nanoelectronic devices creation is also of relevance. In this work, the features of the technique for the formation of a silicon membrane and pores in it, as well as the deposition of graphene on silicon membranes, are presented. The Raman spectra of suspended graphene showing a shift of the G-peak by 4.5 cm–1 and the 2D peak by 7.5 cm–1 relative to the peaks of graphene lying on silicon have been obtained. With the help of approach-retraction curves of the probe of an atomic force microscope, a possible deflection of suspended graphene was studied, showing the distances at which the attractive and repulsive forces are located in the probe – suspended graphene system. It has been established that considerable deflection of graphene, by 1 µm at the pore diameter 5 µm, presents challenge to laser focusing. This primarily affects the use of such structures as a basis for gas or fluid sensor of various organic compounds and for suspended graphene based transistors.

Key words: silicon micropore, graphene, plasma-chemical etching, ion lithography, ultrathin electron-sensitive resist
Published in: ELECTRONICS MATERIALS
Bibliography link: Tsarik K. A., Nekrasov N. P., Nevolin V. K., Bobrinetskiy I. I. Features of the formation of suspended graphene structures over an array of microsized pores. Proc. Univ. Electronics, 2022, vol. 27, no. 6, pp. 707–714. https://doi.org/ 10.24151/1561-5405-2022-27-6-707-714
Financial source: the work has been supported by the Russian Science Foundation (grant No. 19-19-00401).

Nikita P. Nekrasov
National Research University of Electronic Technology, Moscow, Russia

Vladimir K. Nevolin
National Research University of Electronic Technology, Moscow, Russia

Ivan I. Bobrinetskiy
National Research University of Electronic Technology, Moscow, Russia

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UDK: 537.534.35:621.382.032.27
Publication type: Scientific article
Source lang: Russian
DOI: 10.24151/1561-5405-2022-27-6-707-714

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