The up-to-date nanostructures and nanomaterials, used as a part of the electronic component base, are characterized by high extent of heterogeneity and non-equilibrium. During operation of the device under thermal, electric and other effects its characteristics worsen as a result of proceeding of physical-chemical processes. The issues of providing the error-free and fault-tolerant operation of nanodevices in conditions of autonomous work are very urgent and require significant development of the mathematical apparatus in the reliability theory. In the paper the physical-statistic approach (PSA) to the issue of reliability of nanodevices, in particular from the VLSI fragments to the component base level, has been considered. The more accurate than previously formulations while solving the PSA equation have been given. The solution in the quadratures for one dimensional stationary case has been obtained. The PSA advantages compared to a traditional approach of physics of failures, more significant exactly for nanodevices, have been stipulated. Besides, the similarity of the approach formality and the specifics of testing the modern nanodevices with the classical BAZ model have been noted. It has been shown that based on the dynamics of the function of distribution of items in space of their characteristics both the evolution of the reliability function and the evolution of information entropy can be obtained. The weak and strong features of the hypothesis of the relation between such distribution information entropy (based on tests) and the nanodevice physical entropy have been discussed. The proposed physical-statistic approach of the reliability theory combines the advantages of the physical approach based on the concreteness of degradation mechanisms and statistical approach using the reliability function.
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