Simulation of Self-Heating Effect of MOSFET with Various Configuration of Buried Oxide

Simulation of Self-Heating Effect of MOSFET with Various Configuration of Buried Oxide

The SOI MOSFET have the worst conditions of the heat removal from the active region, which negatively manifests itself on the reliability and efficiency of microcircuits. Using the TCAD modeling the self-heating effect has been investigated in the structures of deeply submicron MOSFETs with different configurations of the buried oxide: traditional bulk MOSFET and SOI structures, SELBOX structure, Partial SOI structure, thin-BOX SOI structure, UTBB SOI structure and Quasi-SOI structure. It has been shown that for a number of new designs the maximum temperature value in the MOSFET structure is significantly reduced in comparison with Tmax of the standard SOI MOSFET structure, approaching the typical values for standard MOSFETs on bulk silicon.
Konstantin O. Petrosyants
National Research University of Higher School of Economics, Moscow, Russia; Institute for Design Problems in Microelectronics Russian Academy of Sciences, Moscow, Russia
Dmitriy A. Popov
National Research University of Higher School of Economics, Moscow, Russia
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